We report the first experimental observation of a characteristic nonlinear threshold behavior from dc dynamical response as an evidence for a Wigner crystallization in high-purity GaAs 2D hole systems in zero magnetic field. The system under increasi
ng current drive exhibits voltage oscillations with negative differential resistance. They confirm the coexistence of a moving crystal along with striped edge states as observed for electrons on helium surfaces. However, the threshold is well below the typical classical levels due to a different pinning and depinning mechanism that is possibly related to a quantum process.
We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period
with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor { u} = 2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at { u} = 2/3 a tunneling charge of (2/3)e and a single charged edge.
Subband structure and depolarization shifts in an ultra-high mobility GaAs/Al_{0.24}Ga_{0.76}As quantum well are studied using magneto-infrared spectroscopy via resonant subband Landau level coupling. Resonant couplings between the 1st and up to the
4th subbands are identified by well-separated anti-level-crossing split resonance, while the hy-lying subbands were identified by the cyclotron resonance linewidth broadening in the literature. In addition, a forbidden intersubband transition (1st to 3rd) has been observed. With the precise determination of the subband structure, we find that the depolarization shift can be well described by the semiclassical slab plasma model, and the possible origins for the forbidden transition are discussed.
