Since the advent of atomic force microscopy, mechanical resonators have been used to study a wide variety of phenomena, such as the dynamics of individual electron spins, persistent currents in normal metal rings, and the Casimir force. Key to these
experiments is the ability to measure weak forces. Here, we report on force sensing experiments with a sensitivity of 12 zN Hz^(-1/2) at a temperature of 1.2 K using a resonator made of a carbon nanotube. An ultra-sensitive method based on cross-correlated electrical noise measurements, in combination with parametric downconversion, is used to detect the low-amplitude vibrations of the nanotube induced by weak forces. The force sensitivity is quantified by applying a known capacitive force. This detection method also allows us to measure the Brownian vibrations of the nanotube down to cryogenic temperatures. Force sensing with nanotube resonators offers new opportunities for detecting and manipulating individual nuclear spins as well as for magnetometry measurements.
Graphene and carbon nanotubes represent the ultimate size limit of one and two-dimensional nanoelectromechanical resonators. Because of their reduced dimensionality, graphene and carbon nanotubes display unusual mechanical behavior; in particular, th
eir dynamics is highly nonlinear. Here, we review several types of nonlinear behavior in resonators made from nanotubes and graphene. We first discuss an unprecedented scenario where damping is described by a nonlinear force. This scenario is supported by several experimental facts: (i) the quality factor varies with the amplitude of the motion as a power law whose exponent coincides with the value predicted by the nonlinear damping model, (ii) hysteretic behavior (of the motional amplitude as a function of driving frequency) is absent in some of our resonators even for large driving forces, as expected when nonlinear damping forces are large, and (iii) when we quantify the linear damping force (by performing parametric excitation measurements) we find that it is significantly smaller than the nonlinear damping force. We then review parametric excitation measurements, an alternative actuation method which is based on nonlinear dynamics. Finally, we discuss experiments where the mechanical motion is coupled to electron transport through a nanotube. The coupling can be made so strong that the associated force acting on the nanotube becomes highly nonlinear with displacement and velocity. Overall, graphene and nanotube resonators hold promise for future studies on classical and quantum nonlinear dynamics.
Carbon nanotubes and graphene allow fabricating outstanding nanomechanical resonators. They hold promise for various scientific and technological applications, including sensing of mass, force, and charge, as well as the study of quantum phenomena at
the mesoscopic scale. Here, we have discovered that the dynamics of nanotube and graphene resonators is in fact highly exotic. We propose an unprecedented scenario where mechanical dissipation is entirely determined by nonlinear damping. As a striking consequence, the quality factor Q strongly depends on the amplitude of the motion. This scenario is radically different from that of other resonators, whose dissipation is dominated by a linear damping term. We believe that the difference stems from the reduced dimensionality of carbon nanotubes and graphene. Besides, we exploit the nonlinear nature of the damping to improve the figure of merit of nanotube/graphene resonators.
We have investigated the effects of ozone treatment on graphene by Raman scattering. Sequential ozone short-exposure cycles resulted in increasing the $p$ doping levels as inferred from the blue shift of the 2$D$ and $G$ peak frequencies, without int
roducing significant disorder. The two-phonon 2$D$ and 2$D$ Raman peak intensities show a significant decrease, while, on the contrary, the one-phonon G Raman peak intensity remains constant for the whole exposure process. The former reflects the dynamics of the photoexcited electrons (holes) and, specifically, the increase of the electron-electron scattering rate with doping. From the ratio of 2$D$ to 2$D$ intensities, which remains constant with doping, we could extract the ratio of electron-phonon coupling parameters. This ratio is found independent on the number of layers up to ten layers. Moreover, the rate of decrease of 2$D$ and 2$D$ intensities with doping was found to slowdown inversely proportional to the number of graphene layers, revealing the increase of the electron-electron collision probability.
We present a magneto-transport study of graphene samples into which a mild disorder was introduced by exposure to ozone. Unlike the conductivity of pristine graphene, the conductivity of graphene samples exposed to ozone becomes very sensitive to tem
perature: it decreases by more than 3 orders of magnitude between 100K and 1K. By varying either an external gate voltage or temperature, we continuously tune the transport properties from the weak to the strong localization regime. We show that the transition occurs as the phase coherence length becomes comparable to the localization length. We also highlight the important role of disorder-enhanced electron-electron interaction on the resistivity.
We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital e
ffects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.
We employ electrostatic force microscopy to study the electrostatic environment of graphene sheets prepared with the micro-mechanical exfoliation technique. We detect the electric dipole of residues left from the adhesive tape during graphene prepara
tion, as well as the dipole of water molecules adsorbed on top of graphene. Water molecules form a dipole layer that can generate an electric field as large as 10^9 V/m. We expect that water molecules can significantly modify the electrical properties of graphene devices.
A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several mA through the graphene device, which is here typically a few $mu$
m wide. This ultra-high current density is shown to remove contamination adsorbed on the surface. This method is well suited for quantum electron transport studies of undoped graphene devices, and its utility is demonstrated here by measuring the anomalous quantum Hall effect.
