We present magnetization, specific heat, resistivity, and Hall effect measurements on the cubic B20 phase of MnGe and CoGe and compare to measurements of isostructural FeGe and electronic structure calculations. In MnGe, we observe a transition to a
magnetic state at $T_c=275$ K as identified by a sharp peak in the ac magnetic susceptibility, as well as second phase transition at lower temperature that becomes apparent only at finite magnetic field. We discover two phase transitions in the specific heat at temperatures much below the Curie temperature one of which we associate with changes to the magnetic structure. A magnetic field reduces the temperature of this transition which corresponds closely to the sharp peak observed in the ac susceptibility at fields above 5 kOe. The second of these transitions is not affected by the application of field and has no signature in the magnetic properties or our crystal structure parameters. Transport measurements indicate that MnGe is metal with a negative magnetoresistance similar to that seen in isostructural FeGe and MnSi. Hall effect measurements reveal a carrier concentration of about 0.5 carriers per formula unit also similar to that found in FeGe and MnSi. CoGe is shown to be a low carrier density metal with a very small, nearly temperature independent diamagnetic susceptibility.
We have measured the resistivity, optical conductivity, and magnetic susceptibility of LaSb$_2$ to search for clues as to the cause of the extraordinarily large linear magnetoresistance and to explore the properties of the superconducting state. We f
ind no evidence in the optical conductivity for the formation of a charge density wave state above 20 K despite the highly layered crystal structure. In addition, only small changes to the optical reflectivity with magnetic field are observed indicating that the MR is due to scattering rate, not charge density, variations with field. Although a superconducting ground state was previously reported below a critical temperature of 0.4 K, we observe, at ambient pressure, a fragile superconducting transition with an onset at 2.5 K. In crystalline samples, we find a high degree of variability with a minority of samples displaying a full Meissner fraction below 0.2 K and fluctuations apparent up to 2.5 K. The application of pressure stabilizes the superconducting transition and reduces the anisotropy of the superconducting phase.
We have measured de Haas-van Alphen oscillations of Cr$_{1-x}$V$_x$, $0 le x le 0.05$, at high fields for samples on both sides of the quantum critical point at $x_c=0.035$. For all samples we observe only those oscillations associated with a single
small hole band with magnetic breakdown orbits of the reconstructed Fermi surface evident for $x<x_c$. The absence of oscillations from Fermi surface sheets most responsible for the spin density wave (SDW) in Cr for $x>x_c$ is further evidence for strong fluctuation scattering of these charge carriers well into the paramagnetic regime. We find no significant mass enhancement of the carriers in the single observed band at any $x$. An anomalous field dependence of the dHvA signal for our $x=0.035$ crystal at particular orientations of the magnetic field is identified as due to magnetic breakdown that we speculate results from a field induced SDW transition at high fields.
Landau Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply understood as independent particles with effective masses replacing the free electron mass, has been astonishingly successful. This is true despite the Coul
omb interactions an electron experiences from the host crystal lattice, its defects, and the other ~1022/cm3 electrons. An important extension to the theory accounts for the behaviour of doped semiconductors1,2. Because little in the vast literature on materials contradicts Fermi liquid theory and its extensions, exceptions have attracted great attention, and they include the high temperature superconductors3, silicon-based field effect transistors which host two-dimensional metals4, and certain rare earth compounds at the threshold of magnetism5-8. The origin of the non-Fermi liquid behaviour in all of these systems remains controversial. Here we report that an entirely different and exceedingly simple class of materials - doped small gap semiconductors near a metal-insulator transition - can also display a non-Fermi liquid state. Remarkably, a modest magnetic field functions as a switch which restores the ordinary disordered Fermi liquid. Our data suggest that we have finally found a physical realization of the only mathematically rigourous route to a non-Fermi liquid, namely the undercompensated Kondo effect, where there are too few mobile electrons to compensate for the spins of unpaired electrons localized on impurity atoms9-12.
