We demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi w
avevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order of $10^{-4}$, can induce significant Fermi wavevector anisotropy as large as 3.3, equivalent to a mass anisotropy of 11 in a parabolic band. Our method to tune the anisotropy textit{in situ} provides a platform to study the role of anisotropy on phenomena such as the fractional quantum Hall effect and composite fermions in interacting 2D systems.
There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers at zero mag
netic field affects the properties of the interacting particles at high fields, in particular of the composite fermions (CFs) and the fractional quantum Hall states (FQHSs). We demonstrate here tunable anisotropy for holes and hole-flux CFs confined to GaAs quantum wells, via applying textit{in situ} in-plane strain and measuring their Fermi wavevector anisotropy through commensurability oscillations. For strains on the order of $10^{-4}$ we observe significant deformations of the shapes of the Fermi contours for both holes and CFs. The measured Fermi contour anisotropy for CFs at high magnetic field ($alpha_mathrm{CF}$) is less than the anisotropy of their low-field hole (fermion) counterparts ($alpha_mathrm{F}$), and closely follows the relation: $alpha_mathrm{CF} = sqrt{alpha_mathrm{F}}$. The energy gap measured for the $ u = 2/3$ FQHS, on the other hand, is nearly unaffected by the Fermi contour anisotropy up to $alpha_mathrm{F} sim 3.3$, the highest anisotropy achieved in our experiments.
We report Shubnikov-de Haas oscillations measurements revealing experimental signatures of an annular Fermi sea that develops near the energy band edge of the excited subband of two-dimensional holes confined in a wide GaAs quantum well. As we increa
se the hole density, when the Fermi level reaches the excited subband edge, the low-field magnetoresistance traces show a sudden emergence of new oscillations at an unexpectedly large frequency whose value does $textit{not}$ correspond to the (negligible) density of holes in the excited subband. There is also a sharp and significant increase in zero-field resistance near this onset of subband occupation. Guided by numerical energy dispersion calculations, we associate these observations with the unusual shape of the excited subband dispersion which results in a ring of extrema at finite wavevectors and an annular Fermi sea. Such a dispersion and Fermi sea have long been expected from energy band calculations in systems with strong spin-orbit interaction but their experimental signatures have been elusive.
The thermal conductivity of suspended few-layer hexagonal boron nitride (h-BN) was measured using a micro-bridge device with built-in resistance thermometers. Based on the measured thermal resistance values of 11-12 atomic layer h-BN samples with sus
pended length ranging between 3 and 7.5 um, the room-temperature thermal conductivity of a 11-layer sample was found to be about 360 Wm-1K-1, approaching the basal plane value reported for bulk h-BN. The presence of a polymer residue layer on the sample surface was found to decrease the thermal conductivity of a 5-layer h-BN sample to be about 250 Wm-1K-1 at 300 K. Thermal conductivities for both the 5 layer and the 11 layer samples are suppressed at low temperatures, suggesting increasing scattering of low frequency phonons in thin h-BN samples by polymer residue.
We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function
of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening in graphene. We find that the N=0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.
Using a novel structure, consisting of two, independently contacted graphene single layers separated by an ultra-thin dielectric, we experimentally measure the Coulomb drag of massless fermions in graphene. At temperatures higher than 50 K, the Coulo
mb drag follows a temperature and carrier density dependence consistent with the Fermi liquid regime. As the temperature is reduced, the Coulomb drag exhibits giant fluctuations with an increasing amplitude, thanks to the interplay between coherent transport in the graphene layer and interaction between the two layers.
