Interpolation inequalities in Triebel-Lizorkin-Lorentz spaces and Besov-Lorentz spaces are studied for both inhomogeneous and homogeneous cases. First we establish interpolation inequalities under quite general assumptions on the parameters of the fu
nction spaces. Several results on necessary conditions are also provided. Next, utilizing the interpolation inequalities together with some embedding results, we prove Gagliardo-Nirenberg inequalities for fractional derivatives in Lorentz spaces, which do hold even for the limiting case when one of the parameters is equal to 1 or $infty$.
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy (STEM) ele
ctron beam-induced current (EBIC) imaging to map electronic defects in a GaAs nanowire Schottky diode. Imaging with a non-damaging 80 or 200 kV STEM acceleration potential reveals a minority-carrier diffusion length that decreases near the surface of the hexagonal nanowire, thereby demonstrating that the devices charge collection efficiency (CCE) is limited by surface defects. Imaging with a 300 keV STEM beam introduces vacancy-interstitial (VI, or Frenkel) defects in the GaAs that increase carrier recombination and reduce the CCE of the diode. We create, locate, and characterize a single insertion event, determining that a defect inserted 7 nm from the Schottky interface broadly reduces the CCE by 10% across the entire nanowire device. Variable-energy STEM EBIC imaging thus allows both benign mapping and pinpoint modification of a devices e-h recombination landscape, enabling controlled experiments that illuminate the impact of both extended (1D and 2D) and point (0D) defects on semiconductor device performance.
We consider the Dirichlet and Neumann problems for second-order linear elliptic equations: $$-triangle u +operatorname{div}(umathbf{b}) =f quadtext{ and }quad -triangle v -mathbf{b} cdot abla v =g$$ in a bounded Lipschitz domain $Omega$ in $mathbb{R
}^n$ $(ngeq 3)$, where $mathbf{b}:Omega rightarrow mathbb{R}^n$ is a given vector field. Under the assumption that $mathbf{b} in L^{n}(Omega)^n$, we first establish existence and uniqueness of solutions in $L_{alpha}^{p}(Omega)$ for the Dirichlet and Neumann problems. Here $L_{alpha}^{p}(Omega)$ denotes the Sobolev space (or Bessel potential space) with the pair $(alpha,p)$ satisfying certain conditions. These results extend the classical works of Jerison-Kenig (1995, JFA) and Fabes-Mendez-Mitrea (1998, JFA) for the Poisson equation. We also prove existence and uniqueness of solutions of the Dirichlet problem with boundary data in $L^{2}(partialOmega)$.
We consider Dirichlet problems for linear elliptic equations of second order in divergence form on a bounded or exterior smooth domain $Omega$ in $mathbb{R}^n$, $n ge 3$, with drifts $mathbf{b}$ in the critical weak $L^n$-space $L^{n,infty}(Omega ; m
athbb{R}^n )$. First, assuming that the drift $mathbf{b}$ has nonnegative weak divergence in $L^{n/2, infty }(Omega )$, we establish existence and uniqueness of weak solutions in $W^{1,p}(Omega )$ or $D^{1,p}(Omega )$ for any $p$ with $n = n/(n-1)< p < n$. By duality, a similar result also holds for the dual problem. Next, we prove $W^{1,n+varepsilon}$ or $W^{2, n/2+delta}$-regularity of weak solutions of the dual problem for some $varepsilon, delta >0$ when the domain $Omega$ is bounded. By duality, these results enable us to obtain a quite general uniqueness result as well as an existence result for weak solutions belonging to $bigcap_{p< n }W^{1,p}(Omega )$. Finally, we prove a uniqueness result for exterior problems, which implies in particular that (very weak) solutions are unique in both $L^{n/(n-2),infty}(Omega )$ and $L^{n,infty}(Omega )$.
