Recent advances in silicon nanofabrication have allowed the manipulation of spin qubits that are extremely isolated from noise sources, being therefore the semiconductor equivalent of single atoms in vacuum. We investigate the possibility of directly
coupling an electron spin qubit to a superconducting resonator magnetic vacuum field. By using resonators modified to increase the vacuum magnetic field at the qubit location, and isotopically purified 28Si substrates, it is possible to achieve coupling rates faster than the single spin dephasing. This opens up new avenues for circuit-quantum electrodynamics with spins, and provides a pathway for dispersive read-out of spin qubits via superconducting resonators.
The recently discovered spin Hall magnetoresistance effect electrically probes pure spin current flow across a ferrimagnetic insulator/normal metal bilayer interface. While usually the DC electrical resistance of the bilayer is measured as a function
of the magnetization orientation in the magnetic insulator, we here present magnetoimpedance measurements using bias currents with frequencies up to several GHz. We find that the spin Hall magnetoresistance effect persists up to frequencies of at least 4 GHz, enabling a fast readout of the magnetization direction in magnetic insulator/normal metal bilayers. Our data furthermore show that all interaction time constants relevant for the spin Hall magnetoresistance effect are shorter than 40 ps.
We report the observation of strong coupling between the exchange-coupled spins in gallium-doped yttrium iron garnet and a superconducting coplanar microwave resonator made from Nb. The measured coupling rate of 450 MHz is proportional to the square-
root of the number of exchange-coupled spins and well exceeds the loss rate of 50 MHz of the spin system. This demonstrates that exchange coupled systems are suitable for cavity quantum electrodynamics experiments, while allowing high integration densities due to their extraordinary high spin densities. Our results furthermore show, that experiments with multiple exchange-coupled spin systems interacting via a single resonator are within reach.
We investigate a hybrid structure consisting of $20pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, tu
rning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.
The electrical detection of spin echoes via echo tomography is used to observe decoherence processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO$_2$ interface. Using the Carr-Purcell pu
lse sequence, an echo decay with a time constant of $1.7pm0.2 rm{mu s}$ is observed, in good agreement with theoretical modeling of the interaction between donors and paramagnetic interface states. Electrical spin echo tomography thus can be used to study the spin dynamics in realistic spin qubit devices for quantum information processing.
