In the study of the anomalous Hall effect, the scaling relations between the anomalous Hall and longitudinal resistivities play the central role. The scaling parameters by definition are fixed as the scaling variable (longitudinal resistivity) change
s. Contrary to this paradigm, we unveil that the electron-phonon scattering can result in apparent temperature-dependence of scaling parameters when the longitudinal resistivity is tuned through temperature. An experimental approach is proposed to observe this hitherto unexpected temperature-dependence. We further show that this phenomenon also exists in the nonlinear Hall effect in nonmagnetic inversion-breaking materials and may help identify experimentally the presence of the side-jump contribution besides the Berry-curvature dipole.
Photonic signal processing is essential in the optical communication and optical computing. Numerous photonic signal processors have been proposed, but most of them exhibit limited reconfigurability and automaticity. A feature of fully automatic impl
ementation and intelligent response is highly desirable for the multipurpose photonic signal processors. Here, we report and experimentally demonstrate a fully self-learning and reconfigurable photonic signal processor based on an optical neural network chip. The proposed photonic signal processor is capable of performing various functions including multichannel optical switching, optical multiple-input-multiple-output descrambler and tunable optical filter. All the functions are achieved by complete self-learning. Our demonstration suggests great potential for chip-scale fully programmable optical signal processing with artificial intelligence.
Surface plasmon polaritons have attracted varies of interests due to its special properties, especially in the polarization-controlled devices. Typically, the polarization-controlled devices include directional coupling, focusing lens and plasmonic v
ortex lens, and almost all of them are controlled by the input circularly polarized light or the linearly polarized light. We present a novel device that realize the functions of directional coupling and focusing with high polarization extinction ratio for arbitrary spin of input light. This device offers opportunities for polarization sensing, polarization splitting and polarization-multiplexed near-field images and surface plasmon holography in the future.
Controlling the directionality of surface plasmon polaritons (SPPs) has been widely studied, while the direction of SPPs was always switched by orthogonal polarizations in the reported methods. Here, we present a scheme to control the directionality
of SPPs by arbitrary spin polarizations. Extremely, the device can split two quite adjacent polarization components to two opposite directions. The versatility of the presented design scheme can offer opportunities for polarization sensing, polarization splitting and polarization-controlled plasmonic devices.
Manipulation of orbital angular momentum (OAM) of light is essential in OAM-based optical systems. Especially, OAM divider, which can convert the incoming OAM mode into one or several new smaller modes in proportion at different spatial paths, is ver
y useful in OAM-based optical networks. However, this useful tool was never reported yet. For the first time, we put forward a passive OAM divider based on coordinate transformation. The device consists of a Cartesian to log-polar coordinate converter and an inverse converter. The first converter converts the OAM light into a rectangular-shaped plane light with a transverse phase gradient. And the second converter converts the plane light into multiple diffracted light. The OAM of zeroth-order diffracted light is the product of the input OAM and the scaling parameter. The residual light is output from other diffracted orders. Furthermore, we extend the scheme to realize equal N-dividing of OAM and arbitrary dividing of OAM. The ability of dividing OAM shows huge potential for OAM-based classical and quantum information processing.
The function to measure orbital angular momentum (OAM) distribution of vortex light is essential for OAM applications. Although there are lots of works to measure OAM modes, it is difficult to measure the power distribution of different OAM modes qua
ntitatively and instantaneously, let alone measure the phase distribution among them. In this work, we demonstrate an OAM complex spectrum analyzer, which enables to measure the power and phase distribution of OAM modes simultaneously by employing rotational Doppler Effect. The original OAM mode distribution is mapped to electrical spectrum of beating signals with a photodetector. The power distribution and phase distribution of superimposed OAM beams are successfully retrieved by analyzing the electrical spectrum. We also extend the measurement to other spatial modes, such as linear polarization modes. These results represent a new landmark of spatial mode analysis and show great potentials in optical communication and OAM quantum state tomography.
The layered transition metal dichalcogenides (TMDs) have attracted considerable interest due to their unique electronic and optical properties. Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2. We show tha
t GaN-Al2O3-MoS2 and GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunctions can be created with excellent rectification behaviour. Electroluminescence studies demonstrate prominent direct bandgap excitonic emission in multi-layer MoS2 over the entire vertical junction area. Importantly, the electroluminescence efficiency observed in multi-layer MoS2 is comparable to or even higher than that in monolayers, corresponding to a relative electroluminescence enhancement factor of >1000 in multi-layer MoS2 when compared to its photoluminescence. This striking enhancement of electroluminescence can be attributed to the high electric field induced carrier redistribution from low energy points (indirect bandgap) to high energy points (direct bandgap) of k-space, arising from the unique band structure of MoS2 with a much higher density of states at high energy points. The electric field induced electroluminescence is general for other TMDs including WSe2, and can provide a fundamental platform to probe the carrier injection, population and recombination in multi-layer TMDs and open up a new pathway toward TMD based optoelectronic devices.
