Heterostructures composed of ferromagnetic La0.7Sr0.3MnO3, ferromagnetic SrRuO3, and superconducting YBa2Cu3Ox were studied experimentally. Structures of composition Au/La0.7Sr0.3MnO3/SrRuO3/YBa2Cu3Ox were prepared by pulsed laser deposition, and the
ir high quality was confirmed by X-ray diffraction and reflectometry. A non-collinear magnetic state of the heterostructures was revealed by means of SQUID magnetometry and polarized neutron reflectometry. We have further observed superconducting currents in mesa-structures fabricated by deposition of a second superconducting Nb layer on top of the heterostructure, followed by patterning with photolithography and ion-beam etching. Josephson effects observed in these mesa-structures can be explained by the penetration of a triplet component of the superconducting order parameter into the magnetic layers.
We report on structural, DC, X-ray and neutron studies of hybrid superconducting mesa-heterostructures with a cuprate antiferromagnetic interlayer Ca1-xSrxCuO2 (CSCO). The upper electrode was bilayer Nb/Au superconductor and copper oxide superconduct
or YBa2Cu3O7 (YBCO) was the bottom electrode. It was experimentally shown that during the epitaxial growth of the two films YBCO and CSCO a charge carrier doping takes place in the CSCO interlayer with a depth about 20 nm. The conductivity of the doped part of CSCO layer is close to the metal type, while the reference CSCO film, deposited directly on NdGaO3 substrate, behaves as Mott insulator with the hopping conductivity. The interface Au/CSCO is clearly seen on bright-field image of the cross-section of heterostructure and gives the main contribution to the total resistance of mesa-heterostructure.
Transport and magnetic properties of LSMO manganite thin films and bicrystal junctions were investigated. Manganite films were epitaxially grown on STO, LAO, NGO and LSAT substrates and their magnetic anisotropy were determined by two techniques of m
agnetic resonance spectroscopy. Compare with cubic substrates a small (about 0.3 persentage), the anisotropy of the orthorhombic NGO substrate leads to a uniaxial anisotropy of the magnetic properties of the films in the plane of the substrate. Samples with different tilt of crystallographic basal planes of manganite as well as bicrystal junctions with rotation of the crystallographic axes (RB - junction) and with tilting of basal planes (TB - junction) were investigated. It was found that on vicinal NGO substrates the value of magnetic anisotropy could be varied by changing the substrate inclination angle from 0 to 25 degrees. Measurement of magnetic anisotropy of manganite bicrystal junction demonstrated the presence of two ferromagnetically ordered spin subsystems for both types of bicrystal boundaries RB and TB. The magnitude of the magnetoresistance for TB - junctions increased with decreasing temperature and with the misorientation angle even misorientation of easy axes in the parts of junction does not change. Analysis of the voltage dependencies of bicrystal junction conductivity show that the low value of the magnetoresistance for the LSMO bicrystal junctions can be caused by two scattering mechanisms with the spin- flip of spin - polarized carriers due to the strong electron - electron interactions in a disordered layer at the bicrystal boundary at low temperatures and the spin-flip by anti ferromagnetic magnons at high temperatures.
A new operating regime of the Superconducting Quantum Interference Filter (SQIF) is investigated. The voltage to magnetic field response function, V(H), is determined by a Fraunhofer dependence of the critical current and magnetic flux focusing effec
t in Josephson junctions (F-mode). For SQIF-arrays made of high-Tc superconducting bicrystal Josephson junctions the F-mode plays a predominant role in the voltage-field response V(H). The relatively large superconducting loops of the SQIF are used for inductive coupling to the external input circuit. It is shown that the output noise of a SQIF-array measured with a cooled amplifier in the 1-2 GHz range is determined by the slope of the V(H) characteristic. Power gain and saturation power were evaluated using low frequency SQIF parameters. Finally, we consider the influence of the spread in the parameters of Josephson junctions in the SQIF-array on the V(H) characteristic of the whole structure.
