We present the version 2.0 of the program package GoSam for the automated calculation of one-loop amplitudes. GoSam is devised to compute one-loop QCD and/or electroweak corrections to multi-particle processes within and beyond the Standard Model. Th
e new code contains improvements in the generation and in the reduction of the amplitudes, performs better in computing time and numerical accuracy, and has an extended range of applicability. The extended version of the Binoth-Les-Houches-Accord interface to Monte Carlo programs is also implemented. We give a detailed description of installation and usage of the code, and illustrate the new features in dedicated examples.
We elaborate on GoSam, a code-writer for automated one-loop calculations. After recalling its main features, we present a selection of phenomenological results recently obtained, giving relevance at the evaluation of NLO QCD corrections to the produc
tion of a Higgs boson in association with jets and heavy quarks.
After reviewing the main features of the GoSam framework for automated one-loop calculations, we present a selection of recent phenomenological results obtained with it. In particular, we focus on the recent calculation of NLO QCD corrections to the
production of a Higgs boson in conjunction with jets at the LHC.
We report on the calculation of the cross section for Higgs boson production in association with three jets via gluon fusion, at next-to-leading-order (NLO) accuracy in QCD, in the infinite top-mass approximation. After including the complete NLO QCD
corrections, we observe a strong reduction in the scale dependence of the result, and an increased steepness in the transverse momentum distributions of both the Higgs and the leading jets. The results are obtained with the combined use of GoSam, Sherpa, and the MadDipole/MadEvent framework.
In this talk, the program package GOSAM is presented, which can be used for the automated calculation of one-loop amplitudes for multi-particle processes. The integrands are generated in terms of Feynman diagrams and can be reduced by d-dimensional i
ntegrand-level decomposition, or tensor reduction, or a combination of both. Through various examples we show that GOSAM can produce one-loop amplitudes for both QCD and electroweak theory; model files for theories Beyond the Standard Model can be linked as well.
The program package GoSam is presented which aims at the automated calculation of one-loop amplitudes for multi-particle processes. The amplitudes are generated in terms of Feynman diagrams and can be reduced using either D-dimensional integrand-leve
l decomposition or tensor reduction, or a combination of both. GoSam can be used to calculate one-loop corrections to both QCD and electroweak theory, and model files for theories Beyond the Standard Model can be linked as well. A standard interface to programs calculating real radiation is also included. The flexibility of the program is demonstrated by various examples.
Strain engineering of graphene through interaction with a patterned substrate offers the possibility of tailoring its electronic properties, but will require detailed understanding of how graphenes morphology is determined by the underlying substrate
. However, previous experimental reports have drawn conflicting conclusions about the structure of graphene on SiO2. Here we show that high-resolution non-contact atomic force microscopy of SiO2 reveals roughness at the few-nm length scale unresolved in previous measurements, and scanning tunneling microscopy of graphene on SiO2 shows it to be slightly smoother than the supporting SiO2 substrate. Quantitative analysis of the competition between bending rigidity of the graphene and adhesion to the substrate explains the observed roughness of monolayer graphene on SiO2 as extrinsic, and provides a natural, intuitive description in terms of highly conformal adhesion. The analysis indicates that graphene adopts the conformation of the underlying substrate down to the smallest features with nearly 99% fidelity.
Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. Howe
ver, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graphene, and, given carbons lack of d or f electrons, magnetism in graphene would seem unlikely. Nonetheless, magnetism in graphitic carbon in the absence of transition-metal elements has been reported7-10, with explanations ranging from lattice defects11 to edge structures12, 13 to negative curvature regions of the graphene sheet14. Recent experiments suggest that correlated defects in highly-ordered pyrolytic graphite (HOPG) induced by proton irradiation9 or native to grain boundaries7, can give rise to ferromagnetism. Here we show that point defects (vacancies) in graphene15 are local moments which interact strongly with the conduction electrons through the Kondo effect6, 16-18 providing strong evidence that defects in graphene are indeed magnetic. The Kondo temperature TK is tunable with carrier density from 30-90 K; the high TK is a direct consequence of strong coupling of defects to conduction electrons in a Dirac material18. The results indicate that defect engineering in graphene could be used to generate and control carrier-mediated magnetism, and realize all-carbon spintronic devices. Furthermore, graphene should be an ideal system in which to probe Kondo physics in a widely tunable electron system.
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with m
obility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e^2/(pi*h), the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in mid-gap states.
Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The appar
ent height of the first layer is 1.57 +/- 0.05 nm, indicating standing up pentacene grains in the thin-film phase were formed. Pentacene is molecularly resolved in the second and subsequent molecular layers. The measured in-plane unit cell for the pentacene (001) plane (ab plane) is a=0.76+/-0.01 nm, b=0.59+/-0.01 nm, and gamma=87.5+/-0.4 degrees. The films are unperturbed by the UTOs short-range spatial variation in tunneling probability, and reduce its corresponding effective roughness and correlation exponent with increasing thickness. The pentacene surface morphology follows that of the UTO substrate, preserving step structure, the long range surface rms roughness of ~0.1 nm, and the structural correlation exponent of ~1.
