The physics of the $pi$ phase shift in ferromagnetic Josephson junctions may enable a range of applications for spin-electronic devices and quantum computing. We investigate transitions from ``0 to ``$pi$ states in Nb/Fe/Nb Josephson junctions by var
ying the Fe barrier thickness from 0.5 nm to 5.5 nm. From magnetic measurements we estimate for Fe a magnetic dead layer of about 1.1 nm. By fitting the characteristic voltage oscillations with existing theoretical models we extrapolate an exchange energy of 256 meV, a Fermi velocity of $1.98 times 10^5$ m/s and an electron mean free path of 6.2 nm, in agreement with other reported values. From the temperature dependence of the $I_CR_N$ product we show that its decay rate exhibits a nonmonotonic oscillatory behavior with the Fe barrier thickness.
We report magnetic and electrical measurements of Nb Josephson junctions with strongly ferromagnetic barriers of Co, Ni and Ni80Fe20 (Py). All these materials show multiple oscillations of critical current with barrier thickness implying repeated 0-p
i phase-transitions in the superconducting order parameter. We show in particular that the Co barrier devices can be accurately modelled using existing clean limit theories and so that, despite the high exchange energy (309 meV), the large IcRN value in the pi-state means Co barriers are ideally suited to the practical development of superconducting pi-shift devices.
By lithographically fabricating an optimised Wheatstone bridge geometry, we have been able to make accurate measurements of the resistance of grain boundaries in Y1-xCaxBa2Cu3O7-d between the superconducting transition temperature, Tc, and room tempe
rature. Below Tc the normal state properties were assessed by applying sufficiently high currents. The behaviour of the grain boundary resistance versus temperature and of the conductance versus voltage are discussed in the framework charge transport through a tunnel barrier. The influence of misorientation angle, oxygen content, and calcium doping on the normal state properties is related to changes of the height and shape of the grain boundary potential barrier.
Most measurements of critical current densities in YBa$_2$Cu$_3$O$_{7-delta}$ thin films to date have been performed on films where the textit{c}-axis is grown normal to the film surface. With such films, the analysis of the dependence of $j_c$ on th
e magnetic field angle is complex. The effects of extrinsic contributions to the angular field dependence of $j_c$, such as the measurement geometry and disposition of pinning centres, are convoluted with those intrinsically due to the anisotropy of the material. As a consequence of this, it is difficult to distinguish between proposed FLL structure models on the basis of angular critical current density measurements on textit{c}-axis films. Films grown on mis-cut (vicinal) substrates have a reduced measurement symmetry and thus provide a greater insight into the critical current anisotropy. In this paper previous descriptions of the magnetic field angle dependence of $j_c$ in YBa$_2$Cu$_3$O$_{7-delta}$ are reviewed. Measurements on YBa$_2$Cu$_3$O$_{7-delta}$ thin films grown on a range of vicinal substrates are presented and the results interpreted in terms of the structure and dimensionality of the FLL in YBa$_2$Cu$_3$O$_{7-delta}$. There is strong evidence for a transition in the structure of the flux line lattice depending on magnetic field magnitude, orientation and temperature. As a consequence, a simple scaling law can not, by itself, describe the observed critical current anisotropy in YBa$_2$Cu$_3$O$_{7-delta}$. The experimentally obtained $j_c(theta)$ behaviour of YBCO is successfully described in terms of a kinked vortex structure for fields applied near parallel to the textit{a-b} planes.
The Raman spectrum of the superconductor MgB$_{2}$ has been measured as a function of the Tc of the film. A striking correlation is observed between the $T_{c}$ onset and the frequency of the $E_{2g}$ mode. Analysis of the data with the McMillan form
ula provides clear experimental evidence for the collapse of the electron phonon coupling at the temperature predicted for the convergence of two superconducting gaps into one observable gap. This gives indirect evidence of the convergence of the two gaps and direct evidence of a transition to an isotropic state at 19 K. The value of the electron phonon coupling constant is found to be 1.22 for films with T$_{c}$ 39K and 0.80 for films with T$_{c}leq$19K.
We explore novel junction configurations as an extension of our established Focused Ion Beam-based low TC SNS Junction fabrication technique. By milling a circular trench (diameter 1 micron, width 50 nm) in a 125 nm Nb 75 nm Cu bilayer we define a su
perconducting island connected to the bulk of the film by a normal metal barrier and entirely enclosed in-plane by the superconducting film. The circular junction properties can be probed by depositing an insulating layer over the device and drilling a 0.3 micron diameter hole down to the island to allow a Nb via to be deposited. Device behavior has been studied at 4.2 K. An SNS-like current voltage characteristic and Shapiro steps are observed. It is in terms of magnetic field behavior that the device exhibits novel characteristics: as the device is entirely enclosed in type II superconductor, when a magnetic field is applied perpendicular to the plane of the film, only quantized flux can enter the junction. Hence as applied magnetic field is increased the junction critical current is unchanged, then abruptly suppressed as soon as a flux quantum enters (close to the expected value of lower critical field for the film).
Since the discovery of superconductivity in MgB2 considerable progress has been made in determining the physical properties of the material, which are promising for bulk conductors. Tunneling studies show that the material is reasonably isotropic and
has a well-developed s-wave energy gap (∆), implying that electronic devices based on MgB2 could operate close to 30K. Although a number of groups have reported the formation of thin films by post-reaction of precursors, heterostructure growth is likely to require considerable technological development, making single-layer device structures of most immediate interest. MgB2 is unlike the cuprate superconductors in that grain boundaries do not form good Josephson junctions, and although a SQUID based on MgB2 nanobridges has been fabricated, the nanobridges themselves do not show junction-like properties. Here we report the successful creation of planar MgB2 junctions by localised ion damage in thin films. The critical current (IC) of these devices is strongly modulated by applied microwave radiation and magnetic field. The product of the critical current and normal state resistance (ICRN) is remarkably high, implying a potential for very high frequency applications.
