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We report magnetic and electrical measurements of Nb Josephson junctions with strongly ferromagnetic barriers of Co, Ni and Ni80Fe20 (Py). All these materials show multiple oscillations of critical current with barrier thickness implying repeated 0-pi phase-transitions in the superconducting order parameter. We show in particular that the Co barrier devices can be accurately modelled using existing clean limit theories and so that, despite the high exchange energy (309 meV), the large IcRN value in the pi-state means Co barriers are ideally suited to the practical development of superconducting pi-shift devices.
Josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a phase shift of $pi$ for certain ranges of ferromagnetic layer thic
Josephson junctions with ferromagnetic layers are vital elements in a new class of cryogenic memory devices. One style of memory device contains a spin valve with one hard magnetic layer and one soft layer. To achieve low switching fields, it is adva
We present a study on low-$T_c$ superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions. SIFS junctions have gained considerable interest in recent years because they show a number of interesting properties for future classical
The dependence of the critical current density j_c on the ferromagnetic interlayer thickness d_F was determined for Nb/Al_2O_3/Cu/Ni/Nb Josephson tunnel junctions with ferromagnetic Ni interlayer from very thin film thicknesses (sim 1 nm) upwards and
We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critic