We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it caus
es the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of u = 2, 4, 6... with a step of Delta u = 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at u = 6 and 10 with 4-fold spin and valley degeneracy.
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the co
nductivity saturates, in bi- and trilayer flling of the higher energy bands is observed to cause a non-monotonic behavior of the conductivity, and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field-effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
We present low-temperature anelastic and dielectric spectroscopy measurements on the perovskite ionic conductor BaCe(1-x)Y(x)O(3-x/2) in the protonated, deuterated and outgassed states. Three main relaxation processes are ascribed to proton migration
, reorientation about an Y dopant and tunneling around a same O atom. An additional relaxation maximum appears only in the dielectric spectrum around 60 K, and does not involve H motion, but may be of electronic origin, e.g. small polaron hopping. The peak at the lowest temperature, assigned to H tunneling, has been fitted with a relaxation rate presenting crossovers from one-phonon transitions, nearly independent of temperature, to two-phonon processes, varying as T^7, to Arrhenius-like. Substituting H with D lowers the overall rate by 8 times. The corresponding peak in the dielectric loss has an intensity nearly 40 times smaller than expected from the classical reorientation of the electric dipole associated with the OH complex. This fact is discussed in terms of coherent tunneling states of H in a cubic and orthorhombically distorted lattice, possibly indicating that only H in the symmetric regions of twin boundaries exhibit tunneling, and in terms of reduction of the effective dipole due to lattice polarization.
