We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction of the ch
arge conductivity by resonant impurity scattering. These findings can be exploited to create materials with high efficiency of charge to spin current conversion by strain engineering.
We present a detailed analysis of the skew-scattering contribution to the spin Hall conductivity using an extended version of the resonant scattering model of Fert and Levy [Phys. Rev. Lett. {bf 106}, 157208 (2011)]. For $5d$ impurities in a Cu host,
the proposed phase shift model reproduces the corresponding first-principles calculations. Crucial for that agreement is the consideration of two scattering channels related to $p$ and $d$ impurity states, since the discussed mechanism is governed by a subtle interplay between the spin-orbit and potential scattering in both angular-momentum channels. It is shown that the potential scattering strength plays a decisive role for the magnitude of the spin Hall conductivity.
Two years after the prediction of a giant spin Hall effect for the dilute Cu(Bi) alloy [Gradhand et al., Phys. Rev. B 81, 245109 (2010)], a comparably strong effect was measured in thin films of Cu(Bi) alloys by Niimi et al. [Phys. Rev. Lett. 109, 15
6602 (2012)]. Both theory and experiment consider the skew-scattering mechanism to be responsible, however they obtain opposite sign for the spin Hall angle. Based on a detailed analysis of existing theoretical results, we explore differences between theory and experiment.
