ترغب بنشر مسار تعليمي؟ اضغط هنا

Insight into the skew-scattering mechanism of the spin Hall effect: potential scattering versus spin-orbit scattering

85   0   0.0 ( 0 )
 نشر من قبل Christian Herschbach
 تاريخ النشر 2013
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We present a detailed analysis of the skew-scattering contribution to the spin Hall conductivity using an extended version of the resonant scattering model of Fert and Levy [Phys. Rev. Lett. {bf 106}, 157208 (2011)]. For $5d$ impurities in a Cu host, the proposed phase shift model reproduces the corresponding first-principles calculations. Crucial for that agreement is the consideration of two scattering channels related to $p$ and $d$ impurity states, since the discussed mechanism is governed by a subtle interplay between the spin-orbit and potential scattering in both angular-momentum channels. It is shown that the potential scattering strength plays a decisive role for the magnitude of the spin Hall conductivity.

قيم البحث

اقرأ أيضاً

91 - G. V. Karnad , C. Gorini , K. Lee 2018
We measure and analyze the effective spin Hall angle of platinum in the low residual resistivity regime by second harmonic measurements of the spin-orbit torques for a multilayer of Pt/Co/AlO$_x$. An angular dependent study of the torques allows us t o extract the effective spin Hall angle responsible for the damping-like torque in the system. We observe a strikingly non-monotonic and reproducible temperature dependence of the torques. This behavior is compatible with recent theoretical predictions which include both intrinsic and extrinsic (impurities and phonons) contributions to the spin Hall effect at finite temperature.
We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity scattering prob lem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant regime. The solution of the transport equations for a random ensemble of spin-orbit impurities reveals that giant spin Hall currents are within the reach of the current state of the art in device fabrication. The spin Hall effect is robust with respect to thermal fluctuations and disorder averaging.
In this note we summarize our recent results for the temperature dependence of transport coefficients of metallic films in the presence of spin-orbit coupling. Our focus is on (i) the spin Nernst and the thermal Edelstein effects, and (ii) the phonon skew scattering contribution to the spin Hall conductivity, which is relevant for the temperature dependence of the spin Hall angle. Depending on the parameters, the latter is expected to show a non-monotonous behavior.
In the presence of spin-orbit coupling, electron scattering off impurities depends on both spin and orbital angular momentum of electrons -- spin-orbit scattering. Although some transport properties are subject to spin-orbit scattering, experimental techniques directly accessible to this effect are limited. Here we show that a signature of spin-orbit scattering manifests itself in quasiparticle interference (QPI) imaged by spectroscopic-imaging scanning tunneling microscopy. The experimental data of a polar semiconductor BiTeI are well reproduced by numerical simulations with the $T$-matrix formalism that include not only scalar scattering normally adopted but also spin-orbit scattering stronger than scalar scattering. To accelerate the simulations, we extend the standard efficient method of QPI calculation for momentum-independent scattering to be applicable even for spin-orbit scattering. We further identify a selection rule that makes spin-orbit scattering visible in the QPI pattern. These results demonstrate that spin-orbit scattering can exert predominant influence on QPI patterns and thus suggest that QPI measurement is available to detect spin-orbit scattering.
325 - M.M. Glazov , L.E. Golub 2020
Exciton Valley Hall effect is the spatial separation of the valley-tagged excitons in the presence of a drag force. Usually, the effect is associated with the anomalous velocity acquired by the particles due to the Berry curvature of the Bloch bands. Here we show that the anomalous velocity plays no role in the exciton valley Hall effect, which is governed by the side-jump and skew scattering mechanisms. We develop microscopic theory of the exciton valley Hall effect in the presence of synthetic electric field and phonon drag and calculate all relevant contributions to the valley Hall current also demonstrating the cancellation of the anomalous velocity. The sensitivity of the effect to the origin of the drag force and to the scattering processes is shown. We extend the drift-diffusion model to account for the valley Hall effect and calculate the exciton density and valley polarization profiles.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا