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We propose an efficient numerical method to study the transport properties of armchair graphene ribbons in the presence of a generic external potential. The method is based on a continuum envelope-function description with physical boundary condition s. The envelope functions are computed in the reciprocal space, and the transmission is then obtained with a recursive scattering matrix approach. This allows a significant reduction of the computational time with respect to finite difference simulations.
The solution of differential problems, and in particular of quantum wave equations, can in general be performed both in the direct and in the reciprocal space. However, to achieve the same accuracy, direct-space finite-difference approaches usually i nvolve handling larger algebraic problems with respect to the approaches based on the Fourier transform in reciprocal space. This is the result of the errors that direct-space discretization formulas introduce into the treatment of derivatives. Here, we propose an approach, relying on a set of sinc-based functions, that allows us to achieve an exact representation of the derivatives in the direct space and that is equivalent to the solution in the reciprocal space. We apply this method to the numerical solution of the Dirac equation in an armchair graphene nanoribbon with a potential varying only in the transverse direction.
We discuss the possibility of diffusive conduction and thus of suppression of shot noise by a factor 1/3 in mesoscopic semiconductor devices with two-dimensional and one-dimensional potential disorder, for which existing experimental results do not p rovide a conclusive result. On the basis of our numerical analysis, we conclude that it is quite difficult to achieve diffusive transport over a reasonably wide parameter range, unless the device dimensions are increased up to the macroscopic scale. In addition, in the case of one-dimensional disorder, some mechanism capable of mode-mixing has to be present in order to reach or even approach the diffusive regime.
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