ﻻ يوجد ملخص باللغة العربية
We discuss the possibility of diffusive conduction and thus of suppression of shot noise by a factor 1/3 in mesoscopic semiconductor devices with two-dimensional and one-dimensional potential disorder, for which existing experimental results do not provide a conclusive result. On the basis of our numerical analysis, we conclude that it is quite difficult to achieve diffusive transport over a reasonably wide parameter range, unless the device dimensions are increased up to the macroscopic scale. In addition, in the case of one-dimensional disorder, some mechanism capable of mode-mixing has to be present in order to reach or even approach the diffusive regime.
We present a numerical investigation of shot noise suppression in mesoscopic cavities and an intuitive semiclassical explanation of the behavior observed in the presence of an orthogonal magnetic field. In particular, we conclude that the decrease of
We perform a numerical investigation of the effect of the disorder associated with randomly located impurities on shot noise in mesoscopic cavities. We show that such a disorder becomes dominant in determining the noise behavior when the amplitude of
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage
We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals
We have derived a general formula describing current noise in multimode ballistic channels connecting source and drain electrodes with Fermi electron gas. In particular (at $eVgg k_{B}T$), the expression describes the nonequilibrium shot noise, which