We have carried out a detailed programme to explore the superconducting characteristics of reactive DC-magnetron sputtered NbN. The basic principle is to ignite a plasma using argon, and then to introduce a small additional nitrogen flow to achieve t
he nitridation of a Nb target. Subsequent sputtering leads to the deposition of NbN onto the host substrate. The characteristics of a sputtered film depend on a number of parameters: argon pressure, nitrogen flow rate and time-evolution profile, substrate material, etc. Crucially, the hysteresis in the target voltage as a function of the nitrogen flow can be used to provide a highly effective monitor of nitrogen consumption during the reactive process. By studying these dependencies we have been able to achieve highly reproducible film characteristics on sapphire, silicon dioxide on silicon, and silicon nitride on silicon. Intrinsic film stress was minimised by optimising the argon pressure, giving NbN films having Tc = 14.65 K. In the paper, we report characteristics such as deposition rate, Residual Resistance Ratio (RRR), film resistivity, transition temperature, and stress, as a function of deposition conditions. In order to enhance our understanding of the microwave properties of the films, we fabricated a wide range of microstrip NbN resonators (half wavelength, quarter wavelength, ring resonators). In the paper, we provide an illustrative result from this work showing a 2.1097 GHz resonator having a Q of 15,962 at 3.3 K.
Low temperature Kinetic Inductance Detectors (KIDs) are attractive candidates for producing quantumsensitive, arrayable sensors for astrophysical and other precision measurement applications. The readout uses a low frequency probe signal with quanta
of energy well-below the threshold for pair-breaking in the superconductor. We have calculated the detailed non-equilibrium quasiparticle and phonon energy spectra generated by the probe signal of the KID when operating well-below its superconducting transition temperature Tc within the framework of the coupled kinetic equations described by Chang and Scalapino.[1] At the lowest bath temperature studied Tb/Tc = 0.1 the quasiparticle distributions can be driven far from equilibrium. In addition to the low frequency probe signal we have incorporated a high frequency (~ 1 THz) source signal well-above the pair-breaking threshold of the superconductor. Calculations of source signal detection efficiency are discussed
We have carried out a detailed programme to explore the superconducting characteristics of reactive DC-magnetron sputtered NbN. The basic principle is to ignite a plasma using argon, and then to introduce a small additional nitrogen flow to achieve t
he nitridation of a Nb target. Subsequent sputtering leads to the deposition of NbN onto the host substrate. The characteristics of a sputtered film depend on a number of parameters: argon pressure, nitrogen flow rate and time-evolution profile, substrate material, etc. Crucially, the hysteresis in the target voltage as a function of the nitrogen flow can be used to provide a highly effective monitor of nitrogen consumption during the reactive process. By studying these dependencies we have been able to achieve highly reproducible film characteristics on sapphire, silicon dioxide on silicon, and silicon nitride on silicon. Intrinsic film stress was minimised by optimising the argon pressure, giving NbN films having Tc = 14.65 K. In the paper, we report characteristics such as deposition rate, Residual Resistance Ratio (RRR), film resistivity, transition temperature, and stress, as a function of deposition conditions. In order to enhance our understanding of the microwave properties of the films, we fabricated a wide range of microstrip NbN resonators (half wavelength, quarter wavelength, ring resonators). In the paper, we provide an illustrative result from this work showing a 2.1097 GHz resonator having a Q of 15,962 at 3.3 K.
We report initial measurements on our firstMoAu Transition Edge Sensors (TESs). The TESs formed from a bilayer of 40 nm of Mo and 106 nm of Au showed transition temperatures of about 320 mK, higher than identical TESs with a MoCu bilayer which is con
sistent with a reduced electron transmission coefficient between the bilayer films. We report measurements of thermal conductance in the 200 nm thick silicon nitride SiNx support structures at this temperature, TES dynamic behaviour and current noise measurements.
Thin-film superconductors with thickness 30 to 500 nm are used as non-equilibrium quantum detectors for photons, phonons or more exotic particles. One of the most basic questions in determining their limiting sensitivity is the efficiency with which
the quanta of interest couple to the detected quasiparticles. As low temperature superconducting resonators, thin-films are attractive candidates for producing quantum-sensitive arrayable sensors and the readout uses an additional microwave probe. We have calculated the quasiparticle generation efficiency eta_s for low energy photons in a representative, clean thin-film superconductor (Al) operating well-below its superconductingtransition temperature as a function of film thickness, within the framework of the coupled kineticequations described by Chang and Scalapino.[J. J. Chang and D. J. Scalapino, J. Low Temp. Phys. 31, 1 (1978)]. We have also included the effect of a lower frequency probe. We show that phonon loss from the thin-film reduces eta_s by as much as 40% compared to earlier models that considered relatively thick films or infinite volumes. We also show that the presence of the probe and signal enhances the generation efficiency slightly. We conclude that the ultimate limiting noise equivalent power of this class of detector is determined by the thin-film geometry.
