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تسجيل مستخدم جديدTowards Ultra-Low-NoiseMoAu Transition Edge Sensors
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We report initial measurements on our firstMoAu Transition Edge Sensors (TESs). The TESs formed from a bilayer of 40 nm of Mo and 106 nm of Au showed transition temperatures of about 320 mK, higher than identical TESs with a MoCu bilayer which is consistent with a reduced electron transmission coefficient between the bilayer films. We report measurements of thermal conductance in the 200 nm thick silicon nitride SiNx support structures at this temperature, TES dynamic behaviour and current noise measurements.
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Far-infrared Transition Edge Sensors (TESs) are being developed for the SAFARI grating spectrometer on the cooled-aperture space telescope SPICA. In support of this work, we have devised a cryogenic (90 mK) test facility for carrying out precision op
tical measurements on ultra-low-noise TESs. Although our facility is suitable for the whole of the SAFARI wavelength range, 34-230 $mu$m, we focus on a representative set of measurements at 60-110 $mu$m using a device having a Noise Equivalent Power (NEP) of 0.32 $mathrm{aW/sqrt{Hz}}$. The system is able to perform a range of measurements: (i) Dark electrical characterisation. (ii) Optical efficiency with respect to a partially coherent beam having a modal composition identical to that of an ideal imaging telescope. (iii) Optical saturation and dynamic range. (iv) Fast optical transient response to a modulated thermal source. (v) Optical transient response in the presence of high-level background loading. We describe dark measurements to determine the operating characteristics of a TES, and then compare predicted optical behaviour with measured optical behaviour. By comparing electrical and optical transient response, we were able to observe thermalisation in the device. We comment on the challenge of eliminating stray light.
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ysical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach.
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a at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit-efficiency also at the detector edge, even in presence of guard rings.
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