Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin tran
sfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better energy performance due to smaller Ohmic losses. Here we introduce a 3-terminal magnetic tunnel junction (MTJ) device that combines both of these mechanisms to achieve new functionality: gate-voltage-modulated spin torque switching. This gating makes possible both more energy-efficient switching and also improved architectures for memory and logic applications, including a simple approach for making magnetic memories with a maximum-density cross-point geometry that does not require a control transistor for every MTJ.
We show that direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junctio
n (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.
We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating transverse
spin current in the Pt, and the resultant transfer of spin angular momentum to the NiFe induces ferromagnetic resonance (FMR) dynamics. The Oersted field from the current also generates an FMR signal but with a different symmetry. The ratio of these two signals allows a quantitative determination of the spin current and the spin Hall angle.
Electrons in atoms possess both spin and orbital degrees of freedom. In non-relativistic quantum mechanics, these are independent, resulting in large degeneracies in atomic spectra. However, relativistic effects couple the spin and orbital motion lea
ding to the well-known fine structure in their spectra. The electronic states in defect-free carbon nanotubes (NTs) are widely believed to be four-fold degenerate, due to independent spin and orbital symmetries, and to also possess electron-hole symmetry. Here we report measurements demonstrating that in clean NTs the spin and orbital motion of electrons are coupled, thereby breaking all of these symmetries. This spin-orbit coupling is directly observed as a splitting of the four-fold degeneracy of a single electron in ultra-clean quantum dots. The coupling favours parallel alignment of the orbital and spin magnetic moments for electrons and anti-parallel alignment for holes. Our measurements are consistent with recent theories that predict the existence of spin-orbit coupling in curved graphene and describe it as a spin-dependent topological phase in NTs. Our findings have important implications for spin-based applications in carbon-based systems, entailing new design principles for the realization of qubits in NTs and providing a mechanism for all-electrical control of spins in NTs.
