Realization of robust coherent quantum phase slips represents a significant experimental challenge. Here we propose a new design consisting of multiple nanowire junctions to realize a phase-slip flux qubit. It admits good tunability provided by gate
voltages applied on superconducting islands separating nanowire junctions. In addition, the gates and junctions can be identical or distinct to each other leading to symmetric and asymmetric setups. We find that the asymmetry can improve the performance of the proposed device, compared with the symmetric case. In particular, it can enhance the effective rate of collective quantum phase slips. Furthermore, we demonstrate how to couple two such devices via a mutual inductance. This is potentially useful for quantum gate operations. Our investigation on how symmetry in multiple nanowire junctions affects the device performance should be useful for the application of phase-slip flux qubits in quantum information processing and quantum metrology.
We propose an approach for probing Majorana bound states (MBSs) in a nanowire via counting statistics of a nearby charge detector in the form of a single-electron transistor (SET). We consider the impacts on the counting statistics by both the local
coupling between the detector and an adjacent MBS at one end of a nanowire and the nonlocal coupling to the MBS at the other end. We show that the Fano factor and the skewness of the SET current are minimized for a symmetric SET configuration in the absence of the MBSs or when coupled to a fermionic state. However, the minimum points of operation are shifted appreciably in the presence of the MBSs to asymmetric SET configurations with a higher tunnel rate at the drain than at the source. This feature persists even when varying the nonlocal coupling and the pairing energy between the two MBSs. We expect that these MBS-induced shifts can be measured experimentally with available technologies and can serve as important signatures of the MBSs.
We propose an approach for achieving ground-state cooling of a nanomechanical resonator (NAMR) capacitively coupled to a triple quantum dot (TQD). This TQD is an electronic analog of a three-level atom in $Lambda$ configuration which allows an electr
on to enter it via lower-energy states and to exit only from a higher-energy state. By tuning the degeneracy of the two lower-energy states in the TQD, an electron can be trapped in a dark state caused by destructive quantum interference between the two tunneling pathways to the higher-energy state. Therefore, ground-state cooling of an NAMR can be achieved when electrons absorb readily and repeatedly energy quanta from the NAMR for excitations.
We propose a current correlation spectrum approach to probe the quantum behaviors of a nanome-chanical resonator (NAMR). The NAMR is coupled to a double quantum dot (DQD), which acts as a quantum transducer and is further coupled to a quantum-point c
ontact (QPC). By measuring the current correlation spectrum of the QPC, shifts in the DQD energy levels, which depend on the phonon occupation in the NAMR, are determined. Quantum behaviors of the NAMR could, thus, be observed. In particular, the cooling of the NAMR into the quantum regime could be examined. In addition, the effects of the coupling strength between the DQD and the NAMR on these energy shifts are studied. We also investigate the impacts on the current correlation spectrum of the QPC due to the backaction from the charge detector on the DQD.
We propose an approach to cool a mechanical resonator (MR) via quantum interference in a triple quantum dot (TQD) capacitively coupled to the MR. The TQD connected to three electrodes is an electronic analog of a three-level atom in $Lambda$ configur
ation. The electrons can tunnel from the left electrode into one of the two dots with lower-energy states, but can only tunnel out from the higher-energy state at the third dot to the right electrode. When the two lower-energy states are tuned to be degenerate, an electron in the TQD can be trapped in a superposition of the degenerate states called the dark state. This effect is caused by the destructive quantum interference between tunneling from the two lower-energy states to the higher-energy state. Under this condition, an electron in the dark state readily absorbs an energy quantum from the MR. Repeating this process, the MR can be cooled to its ground state. Moreover, we propose a scheme for verifying the cooling result by measuring the current spectrum of a charge detector adjacent to a double quantum dot coupled to the MR.
The pyramid-to-dome transition in Ge$_{x}$Si$_{1-x}$ on Si(100) initiated by step bunching on pyramidal quantum dots is atomistically simulated using a novel multi-state lattice model incorporating effective surface reconstructions. Results are expla
ined by a simple theory based on a shallow island approximation. Under given deposition conditions in $d$ dimensions, the shape transition is shown to occur at island size $n_c$ following $n_c^{1/d} propto x^{-zeta}$ independent of temperature and deposition rate, where $zetaalt 2$ and $x$ is the actual Ge concentration in the island. The transition has an energy barrier dominated by the facet interface energy. Fast deposition however can out-run and delay the transition to larger island sizes.
We develop a master equation approach to study the backaction of quantum point contact (QPC) on a double quantum dot (DQD) at zero bias voltage. We reveal why electrons can pass through the zero-bias DQD only when the bias voltage across the QPC exce
eds a threshold value determined by the eigenstate energy difference of the DQD. This derived excitation condition agrees well with experiments on QPC-induced inelastic electron tunneling through a DQD [S. Gustavsson et al., Phys. Rev. Lett. 99, 206804(2007)]. Moreover, we propose a new scheme to generate a pure spin current by the QPC in the absence of a charge current.
We study shot noise in tunneling current through a double quantum dot connected to two electric leads. We derive two master equations in the occupation-state basis and the eigenstate basis to describe the electron dynamics. The approach based on the
occupation-state basis, despite widely used in many previous studies, is valid only when the interdot coupling strength is much smaller than the energy difference between the two dots. In contrast, the calculations using the eigenstate basis are valid for an arbitrary interdot coupling. We show that the master equation in the occupation-state basis includes only the low-order terms with respect to the interdot coupling compared with the more accurate master equation in the eigenstate basis. Using realistic model parameters, we demonstrate that the predicted currents and shot-noise properties from the two approaches are significantly different when the interdot coupling is not small. Furthermore, properties of the shot noise predicted using the eigenstate basis successfully reproduce qualitative features found in a recent experiment.
We study electron transport through a quantum dot, connected to non-magnetic leads, in a magnetic field. A super-Poissonian electron noise due to the effects of both interacting localized states and dynamic channel blockade is found when the Coulomb
blockade is partially lifted. This is sharp contrast to the sub-Poissonian shot noise found in the previous studies for a large bias voltage, where the Coulomb blockade is completely lifted. Moreover, we show that the super-Poissonian shot noise can be suppressed by applying an electron spin resonance (ESR) driving field. For a sufficiently strong ESR driving field strength, the super-Poissonian shot noise will change to be sub-Poissonian.
Accelerated algorithms for simulating the morphological evolution of strained heteroeptiaxy based on a ball and spring lattice model in three dimensions are explained. We derive exact Greens function formalisms for boundary values in the associated l
attice elasticity problems. The computational efficiency is further enhanced by using a superparticle surface coarsening approximation. Atomic hoppings simulating surface diffusion are sampled using a multi-step acceptance-rejection algorithm. It utilizes quick estimates of the atomic elastic energies from extensively tabulated values modulated by the local strain. A parameter controls the compromise between accuracy and efficiency of the acceptance-rejection algorithm.
