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The pyramid-to-dome transition in Ge$_{x}$Si$_{1-x}$ on Si(100) initiated by step bunching on pyramidal quantum dots is atomistically simulated using a novel multi-state lattice model incorporating effective surface reconstructions. Results are explained by a simple theory based on a shallow island approximation. Under given deposition conditions in $d$ dimensions, the shape transition is shown to occur at island size $n_c$ following $n_c^{1/d} propto x^{-zeta}$ independent of temperature and deposition rate, where $zetaalt 2$ and $x$ is the actual Ge concentration in the island. The transition has an energy barrier dominated by the facet interface energy. Fast deposition however can out-run and delay the transition to larger island sizes.
Accelerated algorithms for simulating the morphological evolution of strained heteroeptiaxy based on a ball and spring lattice model in three dimensions are explained. We derive exact Greens function formalisms for boundary values in the associated l
We present a new efficient method for Monte Carlo simulations of diffusion-reaction processes. First introduced by us in [Phys. Rev. Lett., 97:230602, 2006], the new algorithm skips the traditional small diffusion hops and propagates the diffusing pa
By carrying out Monte Carlo simulations based on the two-species atomic-scale kinetic growth model of GaAs(001) homoepitaxy and comparing the results with scanning tunneling microscope images, we show that initial growing islands undergo the structur
We describe the development of a new object kinetic Monte Carlo code where the elementary defect objects are off-lattice atomistic configurations. Atomic-level transitions are used to transform and translate objects, to split objects and to merge the
High entropy alloys (HEAs) are a series of novel materials that demonstrate many exceptional mechanical properties. To understand the origin of these attractive properties, it is important to investigate the thermodynamics and elucidate the evolution