Light-matter interactions that lead to nonthermal changes in size of the sample constitute a photostrictive effect in many compounds. The photostriction phenomenon was observed in four main groups of materials, ferroelectrics, polar, and non-polar se
miconductors, as well as in organic-based materials that are reviewed here. The key mechanisms of photostriction and its dependence on several parameters and perturbations are assessed. The major literature of the photostriction is surveyed, and the review ends with a summary of the proposed technical applications.
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance change
s on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for applications. We propo
se here to take advantage of the multiferroic properties of ferroelectrics, using ferroelasticity to create a remnant strain, persisting after stressing the material by converse piezoelectricity means. While large electric fields are needed to switch the polarization, here writing occurs at subcoercive much lower field values, which can efficiently imprint multiple remnant strain states. A proof-of-principle device, with the simplest and non-optimized resistance strain detection design, is shown here to exhibit 13-memory states of high reproducibility and reliability. The related advantages in lower power consumption and limited device fatigue make our approach relevant for applications.
We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the Co
Fe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.
In electrically polar solids optomechanical effects result from the combination of two main processes, electric field-induced strain and photon-induced voltages. Whereas the former depends on the electrostrictive ability of the sample to convert elec
tric energy into mechanical energy, the latter is caused by the capacity of photons with appropriate energy to generate charges and, therefore, can depend on wavelength.We report here on mechanical deformation of BiFeO3 and its response time to discrete wavelengths of incident light ranging from 365 to 940 nm. The mechanical response of BiFeO3 is found to have two maxima in near-UV and green spectral wavelength regions.
We demonstrate that ethylammonium copper chloride, (C2H5NH3)2CuCl4, a member of the hybrid perovskite family is an electrically polar and magnetic compound with dielectric anomaly around the Curie point (247 K). We have found large spontaneous electr
ic polarization below this point accompanied with a color change in the sample. The system is also ferroelectric, with large remnant polarization (37{mu}C/cm2) that is comparable to classical ferroelectric compounds. The results are ascribed to hydrogen-bond ordering of the organic chains. The coexistence of ferroelectricity and dominant ferromagnetic interactions allows to relate the sample to a rare group of magnetic multiferroic compounds. In such hybrid perovskites the underlying hydrogen bonding of easily tunable organic building blocks in combination with the 3d transition-metal layers offers an emerging pathway to engineer multifuctional multiferroics.
Magnetoelectric coupling in the polycrystalline antiferromagnets CuFe0.95Rh0.05O2 and CuFeO2 has been investigated. For both samples, electric polarization was observed in the absence of an applied external magnetic field demonstrating that for multi
ferroic research ceramics are worth to be studied. The observed magnetodielectric effect for CuFe0.95Rh0.05O2 in the electrically polar phase supports the existence of a noncollinear antiferromagnetic state. Interestingly, the electric polarization of this sample can be suppressed by a magnetic field. The temperature dependence of the relative magnitude of the magnetodielectric effect shows a discontinuity, clearly indicating different mechanisms of the magnetodielectric couplings in polar and paraelectric antiferromagnetic states.
FeVO$_4$ has been studied by heat capacity, magnetic susceptibility, electric polarization and single crystal neutron diffraction experiments. The triclinic crystal structure is made of emph{S}-shaped clusters of six Fe$^{3+}$ ions, linked by VO$_4^{
3-}$ groups. Two long-range magnetic ordering transitions occur at T$_{N1}$=22K and T$_{N2}$=15K. Both magnetic structures are incommensurate. That stable below T$_{N1}$ is collinear with amplitude modulated moments whereas below T$_{N2}$ the arrangement is non-collinear with a helicoidal modulation. Below T$_{N2}$, fevo becomes weakly ferroelectric coincidentally with the loss of the collinearity of the magnetic structure. We conclude that fevo provides another example of frustrated spiral magnet similar to the classical TbMnO$_3$ compound. However, fevo has quenched orbital moments and a particular structure clarifying the respective role of anisotropy and magnetic frustration in this type of multiferroic materials.
