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We demonstrate that ethylammonium copper chloride, (C2H5NH3)2CuCl4, a member of the hybrid perovskite family is an electrically polar and magnetic compound with dielectric anomaly around the Curie point (247 K). We have found large spontaneous electric polarization below this point accompanied with a color change in the sample. The system is also ferroelectric, with large remnant polarization (37{mu}C/cm2) that is comparable to classical ferroelectric compounds. The results are ascribed to hydrogen-bond ordering of the organic chains. The coexistence of ferroelectricity and dominant ferromagnetic interactions allows to relate the sample to a rare group of magnetic multiferroic compounds. In such hybrid perovskites the underlying hydrogen bonding of easily tunable organic building blocks in combination with the 3d transition-metal layers offers an emerging pathway to engineer multifuctional multiferroics.
Heisenberg interactions are ubiquitous in magnetic materials and have been prevailing in modeling and designing quantum magnets. Bond-directional interactions offer a novel alternative to Heisenberg exchange and provide the building blocks of the Kit
The Kitaev model of spin-1/2 on a honeycomb lattice supports degenerate topological ground states and may be useful in topological quantum computation. Na$_{2}$IrO$_{3}$ with honeycomb lattice of Ir ions have been extensively studied as candidates fo
The state of art in the theoretical and experimental studies of transition metal doped oxides (dilute magnetic dielectrics) is reviewed. The available data show that the generic non-equilibrium state of oxide films doped with magnetic impurities may
Hydrogen bond symmetrisations in H-bonded systems triggered by pressure induced nuclear quantum effects (NQEs) is a long-known concept1 but experimental evidences in high-pressure ices have remained elusive with conventional methods2,3. Theoretical w
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked