Superconducting performance of ex-situ SiC-doped MgB2 mono-filamentary tapes

We report on the superconducting performance of the ex-situ SiC doped MgB2 monofilamentary tapes. Polycrystalline powders of MgB2 doped with 5 and 10 wt% SiC were synthesized by conventional solid-state reaction route and characterized for their superconducting performance. It is found that superconducting parameters i.e. upper critical field (Hc2), irreversibility field (Hirr) and critical current density (Jc) are all improved significantly with SiC addition. Also it was found that relatively lower synthesis temperature (700 C) resulted in further improved superconducting parameters. As synthesized powders are used for ex-situ powder-in-tube (PIT) monofilamentary tapes and superconducting parameters are determined. Albeit the superconducting transition temperature (Tc) is decreased slightly (2K) for SiC doped tapes, the superconducting performance in terms of critical current density (Jc), being determined from both magnetization and transport measurements, is improved significantly. In particular the SiC doped and 700 {deg}C synthesized MgB2 tapes exhibited the transport Jc of nearly 10^4 A/cm2 under applied fields of as high as 7 Tesla. Further it is found that the Jc anisotropy decreases significantly for SiC doped tapes. Disorder due to substitution of C at B site being created from broken SiC and the presence of nano SiC respectively in SiC added ex-situ MgB2 tapes are responsible for decreased anisotropy and improved Jc(H) performance.

Hump Structure below Tc in the thermal conductivity of MgB2 superconductor

A reasonable cause of absence of hump structure in thermal conductivity of MgB2 below the superconducting transition temperature (Tc) lies in the appearance of multigap structure. The gaps of lower magnitude can be suppressed by defects so that this system becomes effectively a single gap superconductor. When such a situation is created, it is hoped that thermal conductivity will show hump below Tc. Proceeding along these lines, a sample of MgB2 with a relatively higher residual resistivity (33.3 mili-Ohm-cm)has been found to show a hump structure below Tc. The actual electronic thermal conductivity kel of this sample is less than that expected from the Wiedeman- Franz law by more than a factor of 2.6 in the considered temperature range. Modifying the Wiedeman- Franz law for the electronic contribution by replacing the Lorenz number by an effective Lorenz number Leff (L0) we have obtained two sets of kel, namely those with Leff = 0.1L0 and 0.2L0. Corresponding to these two sets of kel, two sets of the phonon thermal conductivity kph are obtained. kph has been analyzed in terms of an extended Bardeen- Rickayzen- Tewordt theory. The main result of this analysis is that the hump structure corresponds to a gap ratio of 3.5, and that large electron-point defect scattering is the main source of drastic reduction of the electronic thermal conductivity from that given by the usual Wiedeman- Franz law.

Superconducting Properties of adipic acid doped Bulk MgB2 Superconductor

We report the effect of adipic acid (C6H10O4) doping on lattice parameters, microstructure, critical temperature (Tc), current density (Jc), and irreversibility field (Hirr) for MgB2 superconductor. Actual carbon (C) substitution level for boron (B) is estimated to be from 0.40 percent to 2.95 percent for different doping levels. A reduction in Tc from 38.43 to 34.93 K and in lattice parameter a from 3.084(3) A to 3.075(6) Ais observed for the10 wt percent C6H10O4 doped sample in comparison to pristine MgB2. This is an indication of C substitution at boron sites, with the C coming from the decomposition of C6H10O4 at the time of reaction. Interestingly the doped samples have resulted in significant enhancement of Jc and Hirr. All the doped samples exhibit the Jc value of the order of 10^4 A/cm2 at 5 K and 8 T, which is higher by an order of magnitude as compared to undoped sample. This result indicates that C6H10O4 is a promising material for MgB2 for obtaining the excellent Jc values under higher magnetic fields.

Role of Carbon in Enhancing the Performance of MgB2 superconductor

The enhancement of the critical current density (Jc(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (Hc2) being determined from resistivity under magnetic field experiments is though improved for both C substitution and nano-SiC addition the same is more pronounced for the former. In MgB2-xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal Jc(H) values are obtained for x = 0.1 sample . In case of nano-SiC doped in MgB2, the Jc(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.

Synthesis of SmFeAsO by an Easy and Versatile Route and its Physical Property Characterization

We report synthesis, structure, electrical transport and heat capacity of SmFeAsO. The title compound is synthesized by one-step encapsulation of stoichiometric FeAs, Sm, and Sm2O3 in an evacuated (10-5 Torr) quartz tube by prolong (72 hours) annealing at 1100oC. The as synthesized compound is crystallized in tetragonal structure with P4/nmm space group having lattice parameters a = 3.93726(33) A and c = 8.49802(07) A. The resistance (R-T) measurements on the compound exhibited ground state spin-density-wave (SDW)-like metallic steps below 140 K. Heat capacity CP(T) measurements on the title compound, showed an anomaly at around 140 K, which is reminiscent of the SDW ordering of the compound. At lower temperatures the CP(T) shows a clear peak at around 4.5 K. At lower temperature below 20 K, Cp(T) is also measured under an applied field of 7 Tesla. It is concluded that the CP(T) peak at 4.5 K is due to the anti-ferromagnetic(AFM) ordering of Sm3+ spins. These results are in confirmation with ordering of Sm in Sm2-xCexCuO4.

Physical property and electronic structure characterization of bulk superconducting Bi3Ni

We report the experimental and theoretical study on magnetic nature of Bi3Ni system. The structure is found to be orthorhombic (Pnma) with lattice parameters a = 8.879{AA} b = 4.0998{AA} and c = 4.099{AA}. The title compound is synthesized via a solid state reaction route by quartz vacuum encapsulation of 5N purity stoichiometric ingredients of Ni and Bi. The superconducting transition temperature is found to be 4.1 K as confirmed from magnetization and specific heat measurements. The lower critical field (Hc1) and irreversibility field (Hirr) are around 150 and 3000Oe respectively at 2K. Upper critical field (Hc2) as determined from in field (up to 4 Tesla) ac susceptibility is found to be around 2 Tesla at 2K. The normal state specific heat is fitted using Sommerfeld-Debye equation C(T) = {gamma}T + {beta}T3+{delta}T5 and the parameters obtained are {gamma}= 11.08mJ/mol-K2, {beta}= 3.73mJ/mol-K4 and {delta}= 0.0140mJ/mol-K6. The calculated electronic density of states (DOS) at Fermi level N(EF) and Debye temperature {Theta}D are 4.697 states/eV per formula unit and 127.7K respectively. We also estimated the value of electron phonon coupling constant ({lambda}) to be 1.23, which when substituted in MacMillan equation gives Tc = 4.5K. Density functional (DFT) based calculations for experimentally determined lattice parameters show that Ni in this compound is non-magnetic and ferromagnetic interactions seem to play no role. The Stoner condition I*N(EF) = 0.136 per Ni atom also indicates that system cannot have any ferromagnetism. The fixed spin moment (FSM) calculations by fixing total magnetic moment on the unit cell also suggested that this system does not exhibit any signatures of ferromagnetism.

Comparative experimental and Density Functional Theory (DFT) study of the physical properties of MgB2 and AlB2

In present study, we report an inter-comparison of various physical and electronic properties of MgB2 and AlB2. Interestingly, the sign of S(T) is +ve for MgB2 the same is -ve for AlB2. This is consistent our band structure plots. We fitted the experimental specific heat of MgB2 to Debye Einstein model and estimated the value of Debye temperature (theta) and Sommerfeld constant (gamma) for electronic specific heat. Further, from gamma the electronic density of states (DOS) at Fermi level N(EF) is calculated. From the ratio of experimental N (EF) and the one being calculated from DFT, we obtained value of Lembda to be 1.84, thus placing MgB2 in the strong coupling BCS category. The electronic specific heat of MgB2 is also fitted below Tc using pi-model and found that it is a two gap superconductor. The calculated values of two gaps are in good agreement with earlier reports. Our results clearly demonstrate that the superconductivity of MgB2 is due to very large phonon contribution from its stretched lattice. The same two effects are obviously missing in AlB2 and hence it is not superconducting. DFT calculations demonstrated that for MgB2 the majority of states come from Sigma and Pi 2p states of boron on the other hand Sigma band at Fermi level for AlB2 is absent. This leads to a weak electron phonon coupling and also to hole deficiency as Pi bands are known to be of electron type and hence obviously the AlB2 is not superconducting. The DFT calculations are consistent with the measured physical properties of the studied borides, i.e., MgB2 and AlB2

Effect of synthesis temperature on superconducting properties of n-SiC added bulk MgB2 superconductor

We study the effect of synthesis temperature on the phase formation in nano(n)-SiC added bulk MgB2 superconductor. In particular we study: lattice parameters, amount of carbon (C) substitution, microstructure, critical temperature (Tc), irreversibility field (Hirr), critical current density (Jc), upper critical field (Hc2) and flux pinning. Samples of MgB2+(n-SiC)x with x=0.0, 0.05 & 0.10 were prepared at four different synthesis temperatures i.e. 850, 800, 750, and 700oC with the same heating rate as 10oC/min. We found 750oC as the optimal synthesis temperature for n-SiC doping in bulk MgB2 in order to get the best superconducting performance in terms of Jc, Hc2 and Hirr. Carbon (C) substitution enhances the Hc2 while the low temperature synthesis is responsible for the improvement in Jc due to the smaller grain size, defects and nano-inclusion induced by C incorporation into MgB2 matrix, which is corroborated by elaborative HRTEM (high-resolution transmission electron microscopy) results. We optimized the the Tc(R=0) of above 15K for the studied n-SiC doped and 750 0C synthesized MgB2 under 140 KOe field, which is one of the highest values yet obtained for variously processed and nano-particle added MgB2 in literature to our knowledge.

Induction of superconductivity by sulphur doping in FeTe system and post effect of low temperature oxygen annealing

Here, we report the synthesis and characterization of sulphur-substituted iron telluride i.e. FeTe1-xSx; (x = 0-30 %) system and study the impact of low temperature oxygen (O2) annealing as well. Rietveld analysis of room temperature x-ray diffraction (XRD) patterns shows that all the compounds are crystallized in a tetragonal structure (space group P4/nmm) and no secondary phases are observed. Lattice constants are decreased with increasing S concentration. The parent compound of the system i.e. FeTe does not exhibit superconductivity but shows an anomaly in the resistivity measurement at around 78 K, which corresponds to a structural phase transition. Heat capacity Cp(T) measurement also confirms the structural phase transition of FeTe compound. Superconductivity appears by S substitution; the onset of superconducting transition temperature is about 8 K for FeTe0.75S0.25 sample. Thermoelectric power measurements S(T) also shows the superconducting transition at around 7 K for FeTe0.75S0.25 sample. The upper critical fields Hc2(10%), Hc2(50%) and Hc2(90%) are estimated to be 400, 650 and 900 kOe respectively at 0 K by applying Ginzburg Landau (GL) equation. Interestingly, superconducting volume fraction is increased with low temperature (200 oC) O2 annealing at normal pressure. Detailed investigations related to structural (XRD), transport [S(T), R(T)H], magnetization (AC and DC susceptibility) and thermal [Cp(T)] measurements for FeTe1-xS:O2 system are presented and discussed.

Superconductivity in SmFe1-xCoxAsO (x = 0.0 to 0.30)

We report synthesis, structural details and magnetization of SmFe1-xCoxAsO with x ranging from 0.0 to 0.30. It is found that Co substitutes fully at Fe site in SmFeAsO in an iso-structural lattice with slightly compressed cell. The parent compound exhibited known spin density wave (SDW) character below at around 140 K. Successive doping of Co at Fe site suppressed the SDW transition for x = 0.05 and later induced superconductivity for x = 0.10, 0.15 and 0.20 respectively at 14, 15.5 and 9K. The lower critical field as seen from magnetization measurements is below 200Oe. The appearance of bulk superconductivity is established by wide open isothermal magnetization M(H) loops. Superconductivity is not observed for higher content of Co i.e. x = 0.30. Clearly the Co substitution at Fe site in SmFe1-xCoxAsO diminishes the Fe SDW character, introduces bulk superconductivity for x between 0.10 and 0.20 and finally becomes non-superconducting for x above 0.20. The Fe2+ site Co3+ substitution injects mobile electrons to the system and superconductivity appears, however direct substitution introduces simultaneous disorder in superconducting FeAs layer and thus superconductivity disappears for higher content of Co.