Electric field induced magnetic domain wall tilting

The inclination of the magnetic domain wall plane in electric field is observed. The simple theoretical model of this phenomenon that takes into account the spin flexoelectricity is proposed. The value of electric polarization of the magnetic domain wall is estimated as 0.3{mu}C/m^2 that agrees well with the results of electric field driven magnetic domain wall motion measurements.

Ferroelectricity of Neel-type magnetic domain walls

The chirality-dependent magnetoelectric properties of Neel-type domain walls in iron garnet films is observed. The electrically driven magnetic domain wall motion changes the direction to the opposite with the reversal of electric polarity of the probe and with the chirality switching of the domain wall from clockwise to counterclockwise. This proves that the origin of the electric field induced micromagnetic structure transformation is inhomogeneous magnetoelectric interaction.

Phase transitions in multiferroic BiFeO3 crystals, thin-layers, and ceramics: Enduring potential for a single phase, room-temperature magnetoelectric holy grail

Magnetic phase transitions in multiferroic bismuth ferrite (BiFeO3) induced by magnetic field, epitaxial strain, and composition modification are considered. These transitions from a spatially modulated spin spiral state to a homogenous antiferromagnetic one are accompanied by the release of latent magnetization and a linear magnetoelectric effect that makes BiFeO3-based materials efficient room-temperature single phase multiferroics.

Flexomagnetoelectric effect in bismuth ferrite

There is a profound analogy between inhomogeneous magnetoelectric effect in multiferroics and flexoelectric effect in liquid crystals. This similarity gives rise to the flexomagnetoelectric polarization induced by spin modulation. The theoretical estimations of flexomagnetoelectric polarization agree with the value of jumps of polarization in magnetoelectric dependences (~20muC/m^2) observed at spin cycloid suppression at critical magnetic field 200kOe.

Electric Field Induced Transformation of Magnetic Domain Structure in Magnetoelectric Iron Garnet Films

The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 400 V voltage pulses gave the value of domain wall velocity in the range 30-50 m/s. The same velocity was achieved in magnetic field pulse about 50 Oe.