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تسجيل مستخدم جديدFlexomagnetoelectric effect in bismuth ferrite
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There is a profound analogy between inhomogeneous magnetoelectric effect in multiferroics and flexoelectric effect in liquid crystals. This similarity gives rise to the flexomagnetoelectric polarization induced by spin modulation. The theoretical estimations of flexomagnetoelectric polarization agree with the value of jumps of polarization in magnetoelectric dependences (~20muC/m^2) observed at spin cycloid suppression at critical magnetic field 200kOe.
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The process of magnetic relaxation was studied in bismuth ferrite BiFeO3 multiferroic micro-cubes obtained by means of microwave assisted Pechini process. Two different mechanisms of relaxation were found. The first one is a rapid magnetic relaxation
driven by the domain reorientations and/or pinning and motion of domain walls. This mechanism is also responsible for the irreversible properties at low temperatures. The power-law decay of the magnetic moment confirms that this relaxation takes place in the system of weakly interacting ferromagnetic or superferromagnetic domains. The second mechanism is a longterm weak magnetic relaxation due to spin glass-phase.
Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity d
ecrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenological approach, with no microscopic theory, we show that the low temperature growth of the resistivity is accompanied by growth of the Hall coefficient, in agreement with diffusive electron-electron interaction correction mechanism. Our data reasonably explain the low-temperature resistivity upturn.
This study reports on the synthesis of ball-like bismuth ferrite BiFeO3 nanoflowers by means of microwave assisted hydrothermal process and also on their composition and mechanism of growth. It turns out that the petals of the nanoflowers are compose
d of the nanocrystals with the size about 35-39 nm whereas their thickness and size depends on the concentration of surfactants. The petals contain BiFeO3 phase and traces of Bi2O3 oxide and metallic Bi and Fe deposited mainly at their surface. Amounts of impurity phases are more pronounced in nanoflowers synthesized during short time, and become almost negligible for longer microwave processing. The nanoflowers contain also mixed Fe valence, with the Fe2+/Fe3+ ratio depending on the time of synthesis. The growth and shape of the nanoflowers result from the process of diffusion in the initial stages of hydrothermal reaction.
An oxygen hyperstoichiometric ferrite CaBaFe4O7+delta (delta approx 0.14) has been synthesized using soft reduction of CaBaFe4O8. Like the oxygen stoichiometric ferrimagnet CaBaFe4O7, this oxide also keeps the hexagonal symmetry (space group: P63mc),
and exhibits the same high Curie temperature of 270 K. However, the introduction of extra oxygen into the system weakens the ferrimagnetic interaction significantly at the cost of increased magnetic frustration at low temperature. Moreover, this canonical spin glass (Tg ~ 166 K) exhibits an intriguing cross-over from de Almeida-Thouless type to Gabay-Toulouse type critical line in the field temperature plane above a certain field strength, which can be identified as the anisotropy field. Domain wall pinning is also observed below 110 K. These results are interpreted on the basis of cationic disordering on the iron sites.
We report a large entropy change (DeltaS) below 300 K, peaking near TC= 220 K, due to isothermal change of magnetic field, for Gd4Co3, with a refrigeration capacity higher than that of Gd. Notably, the isothermal magnetization is nonhysteretic - an i
mportant criterion for magnetic refrigeration without loss. DeltaS behavior is also compared with that of magnetoresistance.
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