Magnetoresistance of substituted lanthanum manganite (La0.5Eu0.5)0.7Pb0.3MnO3 in the pulse magnetic field H = 25 T was measured at different temperatures. Magnetoresistance relaxation with a characteristic time of 10 -3 s was found. It has been estab
lished that the temperature dependence of the relaxation parameter {tau}(t) at different temperatures correlates with the temperature dependence of electrical resistance R(T). The proposed relaxation mechanism is related to relaxation of conducting and dielectric phases in the sample volume under phase stratification conditions. It is shown that relaxation parameter {tau} reflects the number of boundaries in the volume and not the ratio between phase fractions.
The low-temperature($4.2<T<12.5$ K) magnetotransport ($B<2$ T) of two-dimensional electrons occupying two subbands (with energy $E_1$ and $E_2$) is investigated in GaAs single quantum well with AlAs/GaAs superlattice barriers. Two series of Shubnikov
-de Haas oscillations are found to be accompanied by magnetointersubband (MIS) oscillations, periodic in the inverse magnetic field. The period of the MIS oscillations obeys condition $Delta_{12}=(E_2-E_1)=k cdot hbar omega_c$, where $Delta_{12}$ is the subband energy separation, $omega_c$ is the cyclotron frequency, and $k$ is the positive integer. At $T$=4.2 K the oscillations manifest themselves up to $k$=100. Strong temperature suppression of the magnetointersubband oscillations is observed. We show that the suppression is a result of electron-electron scattering. Our results are in good agreement with recent experiments, indicating that the sensitivity to electron-electron interaction is the fundamental property of magnetoresistance oscillations, originating from the second-order Dingle factor.
The longitudinal resistivity of two dimensional (2D) electrons placed in strong magnetic field is significantly reduced by applied electric field, an effect which is studied in a broad range of magnetic fields and temperatures in GaAs quantum wells w
ith high electron density. The data are found to be in good agreement with theory, considering the strong nonlinearity of the resistivity as result of non-uniform spectral diffusion of the 2D electrons. Inelastic processes limit the diffusion. Comparison with the theory yields the inelastic scattering time of the two dimensional electrons. In the temperature range T=2-10(K) for overlapping Landau levels, the inelastic scattering rate is found to be proportional to T^2, indicating a dominant contribution of the electron-electron scattering to the inelastic relaxation. In a strong magnetic field, the nonlinear resistivity demonstrates scaling behavior, indicating a specific regime of electron heating of well-separated Landau levels. In this regime the inelastic scattering rate is found to be proportional to T^3, suggesting the electron-phonon scattering as the dominant mechanism of the inelastic relaxation.
Warming in complex physical systems, in particular global warming, attracts significant contemporary interest. It is essential, therefore, to understand basic physical mechanisms leading to overheating. It is well known that application of an electri
c field to conductors heats electric charge carriers. Often an elevated electron temperature describes the result of the heating. This paper demonstrates that an electric field applied to a conductor with discrete electron spectrum produces a non-equilibrium electron distribution, which cannot be described by temperature. Such electron distribution changes dramatically the conductivity of highly mobile two dimensional electrons in a magnetic field, forcing them into a state with a zero differential resistance. Most importantly the results demonstrate that, in general, the effective overheating in the systems with discrete spectrum is significantly stronger than the one in systems with continuous and homogeneous distribution of the energy levels at the same input power.
