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Register a new userStructure and morphology of epitaxially grown Fe3O4/NiO bilayers on MgO(001)
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Added by
Joachim Wollschl\\\"ager
Publication date
2015
fields
Physics
and research's language is
English
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Crystalline Fe3O4/NiO bilayers were grown on MgO(001) substrates using reactive molecular beam epitaxy to investigate their structural properties and their morphology. The film thickness either of the Fe3O4 film or of the NiO film has been varied to shed light on the relaxation of the bilayer system. The surface properties as studied by x-ray photo electron spectroscopy and low energy electron diffraction show clear evidence of stoichiometric well-ordered film surfaces. Based on the kinematic approach x-ray diffraction experiments were completely analyzed. As a result the NiO films grow pseudomorphic in the investigated thickness range (up to 34nm) while the Fe3O4 films relax continuously up to the thickness of 50nm. Although all diffraction data show well developed Laue fringes pointing to oxide films of very homogeneous thickness, the Fe3O4-NiO interface roughens continuously up to 1nm root-mean-square roughness with increasing NiO film thickness while the Fe3O4 surface is very smooth independent on the Fe3O4 film thickness. Finally, the Fe3O4-NiO interface spacing is similar to the interlayer spacing of the oxide films while the NiO-MgO interface is expanded.
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We present a comparative study on the morphology and structural as well as magnetic properties of crystalline Fe$_3$O$_4$/NiO bilayers grown on both MgO(001) and SrTiO$_3$(001) substrates by reactive molecular beam epitaxy. These structures are investigated by means of x-ray photoelectron spectroscopy, low energy electron diffraction, x-ray reflectivity and diffraction as well as vibrating sample magnetometry. While the lattice mismatch of NiO grown on MgO(001) is only 0.8%, it is exposed to a lateral lattice mismatch of -6.9% if grown on SrTiO$_3$. In the case of Fe$_3$O$_4$, the misfit strain on MgO(001) and SrTiO$_3$(001) amounts to 0.3% and -7.5%, respectively. To clarify the relaxation process of the bilayer system, the film thicknesses of the magnetite and nickel oxide films have been varied between 5 and 20nm. While NiO films are well ordered on both substrates, Fe$_3$O$_4$ films grown on NiO/SrTiO$_3$ exhibit a higher surface roughness as well as lower structural ordering compared to films grown on NiO/MgO. Further, NiO films grow pseudomorphic in the investigated thickness range on MgO substrates without any indication of relaxation, whereas on SrTiO$_3$ the NiO films show strong strain relaxation. Fe$_3$O$_4$ films exhibit also strong relaxation even for films of 5nm thickness on both NiO/MgO as well as on NiO/SrTiO$_3$. The magnetite layers on both substrates show a fourfold magnetic in-plane anisotropy with magnetic easy axes pointing in $leftlangle100rightrangle$ directions. The coercive field is strongly enhanced for magnetite grown on NiO/SrTiO$_3$ due to higher density of structural defects, compared to magnetite grown on NiO/MgO.
We study the underlying chemical, electronic and magnetic properties of a number of magnetite based thin films. The main focus is placed onto NiO/Fe$_3$O$_4$(001) bilayers grown on MgO(001) and Nb-SrTiO$_3$(001) substrates. We compare the results with those obtained on pure Fe$_3$O$_4$(001) thin films. It is found that the magnetite layers are oxidized and Fe$^{3+}$ dominates at the surfaces due to maghemite ($gamma$-Fe$_2$O$_3$) formation, which decreases with increasing magnetite layer thickness. From a layer thickness of around 20 nm on the cationic distribution is close to that of stoichiometric Fe$_3$O$_4$. At the interface between NiO and Fe$_3$O$_4$ we find the Ni to be in a divalent valence state, with unambiguous spectral features in the Ni 2p core level x-ray photoelectron spectra typical for NiO. The formation of a significant NiFe$_2$O$_4$ interlayer can be excluded by means of XMCD. Magneto optical Kerr effect measurements reveal significant higher coercive fields compared to magnetite thin films grown on MgO(001), and a 45$^{circ}$ rotated magnetic easy axis. We discuss the spin magnetic moments of the magnetite layers and find that the moment increases with increasing thin film thickness. At low thickness the NiO/Fe$_3$O$_4$ films grown on Nb-SrTiO$_3$ exhibits a significantly decreased spin magnetic moments. A thickness of 20 nm or above leads to spin magnetic moments close to that of bulk magnetite.
The ability to synthesis well-ordered two-dimensional materials under ultra-high vacuum and directly characterize them by other techniques in-situ can greatly advance our current understanding on their physical and chemical properties. In this paper, we demonstrate that iso-oriented {alpha}-MoO3 films with as low as single monolayer thickness can be reproducibly grown on SrTiO3(001) (STO) substrates by molecular beam epitaxy ( (010)MoO3 || (001)STO, [100]MoO3 || [100]STO or [010]STO) through a self-limiting process. While one in-plane lattice parameter of the MoO3 is very close to that of the SrTiO3 (aMoO3 = 3.96 {AA}, aSTO = 3.905 {AA}), the lattice mismatch along other direction is large (~5%, cMoO3 = 3.70 {AA}), which leads to relaxation as clearly observed from the splitting of streaks in reflection high-energy electron diffraction (RHEED) patterns. A narrow range in the growth temperature is found to be optimal for the growth of monolayer {alpha}-MoO3 films. Increasing deposition time will not lead to further increase in thickness, which is explained by a balance between deposition and thermal desorption due to the weak van der Waals force between {alpha}-MoO3 layers. Lowering growth temperature after the initial iso-oriented {alpha}-MoO3 monolayer leads to thicker {alpha}-MoO3(010) films with excellent crystallinity.
Epitaxy of oxide materials on silicon (Si) substrates is of great interest for future functional devices using the large variety of physical properties of the oxides as ferroelectricity, ferromagnetism, or superconductivity. Recently, materials with high spin polarization of the charge carriers have become interesting for semiconductor-oxide hybrid devices in spin electronics. Here, we report on pulsed laser deposition of magnetite (Fe3O4) on Si(001) substrates cleaned by an in situ laser beam high temperature treatment. After depositing a double buffer layer of titanium nitride (TiN) and magnesium oxide (MgO), a high quality epitaxial magnetite layer can be grown as verified by RHEED intensity oscillations and high resolution x-ray diffraction.
High-quality and impurity-free magnetite surfaces with (sqrt2xsqrt2)R45o reconstruction have been obtained for the Fe3O4(001) epitaxial films deposited on Fe(001). Based on atomically resolved STM images for both negative and positive sample polarity and Density Functional Theory calculations, a model of the magnetite (001) surface terminated with Fe ions forming dimers on the reconstructed (sqrt2xsqrt2)R45o octahedral iron layer is proposed.
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