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Electronic and magnetic structure of epitaxial NiO/Fe$_3$O$_4$(001) heterostructures grown on MgO(001) and Nb-doped SrTiO$_3$(001)

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 Added by Karsten Kuepper
 Publication date 2016
  fields Physics
and research's language is English




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We study the underlying chemical, electronic and magnetic properties of a number of magnetite based thin films. The main focus is placed onto NiO/Fe$_3$O$_4$(001) bilayers grown on MgO(001) and Nb-SrTiO$_3$(001) substrates. We compare the results with those obtained on pure Fe$_3$O$_4$(001) thin films. It is found that the magnetite layers are oxidized and Fe$^{3+}$ dominates at the surfaces due to maghemite ($gamma$-Fe$_2$O$_3$) formation, which decreases with increasing magnetite layer thickness. From a layer thickness of around 20 nm on the cationic distribution is close to that of stoichiometric Fe$_3$O$_4$. At the interface between NiO and Fe$_3$O$_4$ we find the Ni to be in a divalent valence state, with unambiguous spectral features in the Ni 2p core level x-ray photoelectron spectra typical for NiO. The formation of a significant NiFe$_2$O$_4$ interlayer can be excluded by means of XMCD. Magneto optical Kerr effect measurements reveal significant higher coercive fields compared to magnetite thin films grown on MgO(001), and a 45$^{circ}$ rotated magnetic easy axis. We discuss the spin magnetic moments of the magnetite layers and find that the moment increases with increasing thin film thickness. At low thickness the NiO/Fe$_3$O$_4$ films grown on Nb-SrTiO$_3$ exhibits a significantly decreased spin magnetic moments. A thickness of 20 nm or above leads to spin magnetic moments close to that of bulk magnetite.



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We present a comparative study on the morphology and structural as well as magnetic properties of crystalline Fe$_3$O$_4$/NiO bilayers grown on both MgO(001) and SrTiO$_3$(001) substrates by reactive molecular beam epitaxy. These structures are investigated by means of x-ray photoelectron spectroscopy, low energy electron diffraction, x-ray reflectivity and diffraction as well as vibrating sample magnetometry. While the lattice mismatch of NiO grown on MgO(001) is only 0.8%, it is exposed to a lateral lattice mismatch of -6.9% if grown on SrTiO$_3$. In the case of Fe$_3$O$_4$, the misfit strain on MgO(001) and SrTiO$_3$(001) amounts to 0.3% and -7.5%, respectively. To clarify the relaxation process of the bilayer system, the film thicknesses of the magnetite and nickel oxide films have been varied between 5 and 20nm. While NiO films are well ordered on both substrates, Fe$_3$O$_4$ films grown on NiO/SrTiO$_3$ exhibit a higher surface roughness as well as lower structural ordering compared to films grown on NiO/MgO. Further, NiO films grow pseudomorphic in the investigated thickness range on MgO substrates without any indication of relaxation, whereas on SrTiO$_3$ the NiO films show strong strain relaxation. Fe$_3$O$_4$ films exhibit also strong relaxation even for films of 5nm thickness on both NiO/MgO as well as on NiO/SrTiO$_3$. The magnetite layers on both substrates show a fourfold magnetic in-plane anisotropy with magnetic easy axes pointing in $leftlangle100rightrangle$ directions. The coercive field is strongly enhanced for magnetite grown on NiO/SrTiO$_3$ due to higher density of structural defects, compared to magnetite grown on NiO/MgO.
Crystalline Fe3O4/NiO bilayers were grown on MgO(001) substrates using reactive molecular beam epitaxy to investigate their structural properties and their morphology. The film thickness either of the Fe3O4 film or of the NiO film has been varied to shed light on the relaxation of the bilayer system. The surface properties as studied by x-ray photo electron spectroscopy and low energy electron diffraction show clear evidence of stoichiometric well-ordered film surfaces. Based on the kinematic approach x-ray diffraction experiments were completely analyzed. As a result the NiO films grow pseudomorphic in the investigated thickness range (up to 34nm) while the Fe3O4 films relax continuously up to the thickness of 50nm. Although all diffraction data show well developed Laue fringes pointing to oxide films of very homogeneous thickness, the Fe3O4-NiO interface roughens continuously up to 1nm root-mean-square roughness with increasing NiO film thickness while the Fe3O4 surface is very smooth independent on the Fe3O4 film thickness. Finally, the Fe3O4-NiO interface spacing is similar to the interlayer spacing of the oxide films while the NiO-MgO interface is expanded.
We investigated perpendicular magnetic anisotropy (PMA) and related properties of epitaxial Fe (0.7 nm)/MgAl2O4(001) heterostructures prepared by electron-beam evaporation. Using an optimized structure, we obtained a large PMA energy ~1 MJ/m3 at room temperature, comparable to that in ultrathin-Fe/MgO(001) heterostructures. Both the PMA energy and saturation magnetization show weak temperature dependence, ensuring wide working temperature in application. The effective magnetic damping constant of the 0.7 nm Fe layer was ~0.02 using time-resolved magneto-optical Kerr effect. This study demonstrates capability of the Fe/MgAl2O4 heterostructure for perpendicular magnetic tunnel junctions, as well as a good agreement with theoretical predictions.
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The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions. A high sheet carrier concentration of 2x10$^{16}$ cm$^{-2}$ and mobility of 30,000 cm$^2$/V s is reported for the metallic interfaces, which is similar to the quasi-two dimensional gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface with similar growth conditions. High-resolution synchrotron X-ray-based structural determination of the atomic-scale structures of both metallic and insulating LCO/STO interfaces show chemical intermixing and an interfacial lattice expansion. Angle resolved photoemission spectroscopy of 2 and 4 uc metallic LCO/STO shows no intensity near the Fermi level indicating that the conducting region is occurring deep enough in the substrate to be inaccessible to photoemission spectroscopy. Post-growth annealing in flowing oxygen causes a reduction in the sheet carrier concentration and mobility for the metallic interface while annealing the insulating interface at high temperatures and low oxygen partial pressures results in metallicity. These results highlight the critical role of defects related to oxygen vacancies on the creation of mobile charge carriers at the LCO/STO heterointerface.
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