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Register a new userPhase stability in SmB$_6$
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We investigate flux-grown Sm-deficient Sm$_x$B$_6$ ($x < 1$) by global and local tools, including X-ray diffraction (XRD), electronic transport, and scanning tunneling microscopy (STM) and spectroscopy (STS). All these tools indicate a remarkable persistence of the SmB$_6$ local structure in the flux-grown samples even for nominal Sm concentrations as low as $x=0.75$. As a consequence, the overall electronic properties of Sm$_x$B$_6$, and particularly the surface conductance at low temperature, is only affected locally by the Sm-deficiency.
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Possible existence of topologically protected surface in samarium hexaboride has created a strong need for investigations allowing to distinguish between properties coming from the surface states and those originating in the (remaining) bulk. Studies of SmB6 thin films represent a favorable approach allowing well defined variations of the bulk volume that is not affected by surface states. Moreover, thin films are highly desirable for potential technology applications. However, the growth of SmB6 thin films is accompanied by technology problems, which are typically associated with maintaining the correct stoichiometry of samarium and boron. Here we present feasibility study of SmB6 thin film synthesis by pulsed laser deposition (PLD) from a single stoichiometric SmB6 target. As proved by Rutherford Backscattering Spectrometry (RBS), we succeeded to obtain the same ratio of samarium and boron in the films as that in the target. Thin films revealing characteristic electrical properties of (crystalline) SmB6 were successfully deposited on MgO, sapphire, and glass-ceramics substrates, when the substrates were kept at temperature of 600$^circ$ C during the deposition. Performed electrical resistance studies have revealed that bulk properties of the films are only slightly affected by the substrate. Our results indicate that PLD is a suitable method for complex and intensive research of SmB6 and similar systems.
We show that the resistivity plateau of SmB$_6$ at low temperature, typically taken as a hallmark of its conducting surface state, can systematically be influenced by different surface treatments. We investigate the effect of inflicting an increasing number of hand-made scratches and microscopically defined focused ion beam-cut trenches on the surfaces of flux-grown Sm$_{1-x}$Gd$_x$B$_6$ with $x =$ 0, 0.0002. Both treatments increase the resistance of the low-temperature plateau, whereas the bulk resistance at higher temperature largely remains unaffected. Notably, the temperature at which the resistance deviates from the thermally activated behavior decreases with cumulative surface damage. These features are more pronounced for the focused ion beam treated samples, with the difference likely being related to the absence of microscopic defects like subsurface cracks. Therefore, our method presents a systematic way of controlling the surface conductance.
We present results of Scanning Tunneling Microscopy and Spectroscopy (STS) measurements on the Kondo insulator SmB$_6$. The vast majority of surface areas investigated was reconstructed but, infrequently, also patches of varying size of non-reconstructed, Sm- or B-terminated surfaces were found. On the smallest patches, clear indications for the hybridization gap and inter-multiplet transitions were observed. On non-reconstructed surface areas large enough for coherent co-tunneling we were able to observe clear-cut Fano resonances. Our locally resolved STS indicated considerable finite conductance on all surfaces independent of their structure.
Recent quantum oscillation experiments on SmB$_6$ pose a paradox, for while the angular dependence of the oscillation frequencies suggest a 3D bulk Fermi surface, SmB$_6$ remains robustly insulating to very high magnetic fields. Moreover, a sudden low temperature upturn in the amplitude of the oscillations raises the possibility of quantum criticality. Here we discuss recently proposed mechanisms for this effect, contrasting bulk and surface scenarios. We argue that topological surface states permit us to reconcile the various data with bulk transport and spectroscopy measurements, interpreting the low temperature upturn in the quantum oscillation amplitudes as a result of surface Kondo breakdown and the high frequency oscillations as large topologically protected orbits around the X point. We discuss various predictions that can be used to test this theory.
Topological insulators give rise to exquisite electronic properties due to their spin-momentum locked Dirac-cone-like band structure. Recently, it has been suggested that the required opposite parities between valence and conduction band along with strong spin-orbit coupling can be realized in correlated materials. Particularly, SmB$_6$ has been proposed as candidate material for a topological Kondo insulator. By utilizing scanning tunneling microscopy and spectroscopy measurements down to 0.35 K, we observed several states within the hybridization gap of about $pm$20 meV on well characterized (001) surfaces of SmB$_6$. The spectroscopic response to impurities and magnetic fields allows to distinguish between dominating bulk and surface contributions to these states. The surface contributions develop particularly strongly below about 7 K which can be understood in terms of a breakdown of the Kondo effect at the surface. Our high-resolution data provide detailed insight into the electronic structure of SmB$_6$, which will reconcile many current discrepancies on this compound.
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