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Register a new userHybridization gap and Fano resonance in SmB${_6}$
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We present results of Scanning Tunneling Microscopy and Spectroscopy (STS) measurements on the Kondo insulator SmB$_6$. The vast majority of surface areas investigated was reconstructed but, infrequently, also patches of varying size of non-reconstructed, Sm- or B-terminated surfaces were found. On the smallest patches, clear indications for the hybridization gap and inter-multiplet transitions were observed. On non-reconstructed surface areas large enough for coherent co-tunneling we were able to observe clear-cut Fano resonances. Our locally resolved STS indicated considerable finite conductance on all surfaces independent of their structure.
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The nature of the second order phase transition that occurs in URu2Si2 at 17.5 K remains puzzling despite intensive research over the past two and half decades. A key question emerging in the field is whether a hybridization gap between the renormalized bands can be identified as the long-sought hidden order parameter. We report on the measurement of a hybridization gap in URu2Si2 employing a spectroscopic technique based on quasiparticle scattering across a ballistic metallic junction. The differential conductance exhibits an asymmetric double-peak structure, a clear signature for a Fano resonance in a Kondo lattice. The extracted hybridization gap opens well above the transition temperature, indicating that it is not the hidden order parameter. Our results put stringent constraints on the origin of the hidden order transition in URu2Si2 and demonstrate that quasiparticle scattering spectroscopy can probe the band renormalizations in a Kondo lattice via detection of a novel type of Fano resonance.
A necessary element for the predicted topological state in Kondo insulator SmB$_6$ is the hybridization gap which opens in this compound at low temperatures. In this work, we present a comparative study of the in-gap density of states due to Sm vacancies by Raman scattering spectroscopy and heat capacity for samples where the number of Sm vacancies is equal to or below 1 %. We demonstrate that hybridization gap is very sensitive to the presence of Sm vacancies. At the amount of vacancies above 1 % the gap fills in with impurity states and low temperature heat capacity is enhanced.
Recent quantum oscillation experiments on SmB$_6$ pose a paradox, for while the angular dependence of the oscillation frequencies suggest a 3D bulk Fermi surface, SmB$_6$ remains robustly insulating to very high magnetic fields. Moreover, a sudden low temperature upturn in the amplitude of the oscillations raises the possibility of quantum criticality. Here we discuss recently proposed mechanisms for this effect, contrasting bulk and surface scenarios. We argue that topological surface states permit us to reconcile the various data with bulk transport and spectroscopy measurements, interpreting the low temperature upturn in the quantum oscillation amplitudes as a result of surface Kondo breakdown and the high frequency oscillations as large topologically protected orbits around the X point. We discuss various predictions that can be used to test this theory.
The Kondo insulator SmB$_6$ has long been known to display anomalous transport behavior at low temperatures, T$<5$ K. In this temperatures range, a plateau is observed in the dc resistivity, contrary to the exponential divergence expected for a gapped system. Recent theoretical calculations suggest that SmB$_6$ may be the first topological Kondo insulator (TKI) and propose that the residual conductivity is due to topological surface states which reside within the Kondo gap. Since the TKI prediction many experiments have claimed to observe high mobility surface states within a perfectly insulating hybridization gap. Here, we investigate the low energy optical conductivity within the hybridization gap of single crystals of SmB$_6$ via time domain terahertz spectroscopy. Samples grown by both optical floating zone and aluminum flux methods are investigated to probe for differences originating from sample growth techniques. We find that both samples display significant 3D bulk conduction originating within the Kondo gap. Although SmB$_6$ may be a bulk dc insulator, it shows significant bulk ac conduction that is many orders of magnitude larger than any known impurity band conduction. The nature of these in-gap states and their coupling with the low energy spin excitons of SmB$_6$ is discussed. Additionally, the well defined conduction path geometry of our optical experiments allows us to show that any surface states, which lie below our detection threshold if present, must have a sheet resistance of R$/square ge$ 1000 $Omega$.
Strongly correlated topological surface states are promising platforms for next-generation quantum applications, but they remain elusive in real materials. The correlated Kondo insulator SmB$_6$ is one of the most promising candidates, with theoretically predicted heavy Dirac surface states supported by transport and scanning tunneling microscopy (STM) experiments. However, a puzzling discrepancy appears between STM and angle-resolved photoemission (ARPES) experiments on SmB$_6$. Although ARPES detects spin-textured surface states, their velocity is an order of magnitude higher than expected, while the Dirac point -- the hallmark of any topological system -- can only be inferred deep within the bulk valence band. A significant challenge is that SmB$_6$ lacks a natural cleavage plane, resulting in ordered surface domains limited to 10s of nanometers. Here we use STM to show that surface band bending can shift energy features by 10s of meV between domains. Starting from our STM spectra, we simulate the full spectral function as an average over multiple domains with different surface potentials. Our simulation shows excellent agreement with ARPES data, and thus resolves the apparent discrepancy between large-area measurements that average over multiple band-shifted domains and atomically-resolved measurements within a single domain.
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