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Register a new userTopological superconductivity in Ni-based transition-metal trichalcogenide superconductors
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Based on a two-orbital honeycomb lattice model and random phase approximation, we investigate the pairing symmetry of the Ni-based transition-metal trichalcogenide. We find that an I-wave (A2g) state and a chiral d-wave state are dominant and nearly degenerate for typical electron and hole dopings. These two states carry nontrivial topological properties, which are manifested by the presence of chiral edge states in the d+id-wave state and dispersionless Andreev bound state at zero energy in the I-wave state. Ni-based transition-metal trichalcogenides provide us a new platform to study the exotic phenomena emerged from electron-electron correlation effects.
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We investigate the electronic physics of layered Ni-based trichalcogenide NiPX$_3$ (X=S, Se), a member of transition-metal trichalcogenides (TMTs) with the chemical formula, ABX$_3$. These Ni-based TMTs distinguish themselves from other TMTs as their low energy electronic physics can be effectively described by the two $e_g$ d-orbitals. The major band kinematics is characterized by the unusal long-range effective hopping between two third nearest-neighbor (TNN) Ni sites in the two-dimensional Ni honeycomb lattice so that the Ni lattice can be equivalently viewed as four weakly coupled honeycomb sublattices. Within each sublattice, the electronic physics is described by a strongly correlated two-orbital graphene-type model that results in an antiferromagnetic (AFM) ground state near half filling. We show that the low energy physics in a paramagnetic state is determined by the eight Dirac cones which locate at $K$, $K$, $frac{K}{2}$ and $frac{K}{2}$ points in the first Brillouin zone with a strong AFM fluctuation between two $K (K)$ and $frac{K}{2} (frac{K}{2})$ Dirac cones and carrier doping can sufficiently suppress the long-range AFM order and allow other competing orders, such as superconductivity, to emerge. The material can be an ideal system to study many exotic phenomena emerged from strong electron-electron correlation, including a potential $dpm id$ superconducting state at high temperature.
A comprehensive first principles study on the electronic topological transition in a number of 122 family of Fe based superconductors is presented. Doping as well as temperature driven Lifshitz transitions are found from first principles simulations in a variety of Fe based superconductors that are consistent with experimental findings. In all the studied compounds the Lifshitz transitions are consistently found to occur at a doping concentration where superconductivity is highest and magnetism disappears. Systematically, the Lifshitz transition occurs in the electron Fermi surfaces for hole doping, whereas in hole Fermi surfaces for electron doping as well as iso-electronic doping. Temperature driven Lifshitz transition is found to occur in the iso-electronic Ru-doped BaFe$_2$As$_2$ compounds. Fermi surface areas are found to carry sensitivity of topological modifications more acutely than the band structures and can be used as a better experimental probe to identify electronic topological transition.
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We investigate the currently debated issue concerning whether transition metal substitutions dope carriers in iron based superconductors. From first-principles calculations of the configuration-averaged spectral function of BaFe$_2$As$_2$ with disordered Co/Zn substitutions of Fe, important doping effects are found beyond merely changing the carrier density. While the chemical potential shifts suggest doping of a large amount of carriers, a reduction of the coherent carrier density is found due to the loss of spectral weight. Therefore, none of the change in the Fermi surface, density of states, or charge distribution can be solely used for counting doped coherent carriers, let alone presenting the full effects of the disordered substitutions. Our study highlights the necessity of including disorder effects in the studies of doped materials in general.
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