No Arabic abstract
We investigate the electronic physics of layered Ni-based trichalcogenide NiPX$_3$ (X=S, Se), a member of transition-metal trichalcogenides (TMTs) with the chemical formula, ABX$_3$. These Ni-based TMTs distinguish themselves from other TMTs as their low energy electronic physics can be effectively described by the two $e_g$ d-orbitals. The major band kinematics is characterized by the unusal long-range effective hopping between two third nearest-neighbor (TNN) Ni sites in the two-dimensional Ni honeycomb lattice so that the Ni lattice can be equivalently viewed as four weakly coupled honeycomb sublattices. Within each sublattice, the electronic physics is described by a strongly correlated two-orbital graphene-type model that results in an antiferromagnetic (AFM) ground state near half filling. We show that the low energy physics in a paramagnetic state is determined by the eight Dirac cones which locate at $K$, $K$, $frac{K}{2}$ and $frac{K}{2}$ points in the first Brillouin zone with a strong AFM fluctuation between two $K (K)$ and $frac{K}{2} (frac{K}{2})$ Dirac cones and carrier doping can sufficiently suppress the long-range AFM order and allow other competing orders, such as superconductivity, to emerge. The material can be an ideal system to study many exotic phenomena emerged from strong electron-electron correlation, including a potential $dpm id$ superconducting state at high temperature.
The discovery of unconventional superconductivity in hole doped NdNiO2, similar to CaCuO2, has received enormous attention. However, different from CaCuO2, RNiO2 (R = Nd, La) has itinerant electrons in the rare-earth spacer layer. Previous studies show that the hybridization between Ni-dx2-y2 and rare-earth-d orbitals is very weak and thus RNiO2 is still a promising analog of CaCuO2. Here, we perform first-principles calculations to show that the hybridization between Ni-dx2-y2 orbital and itinerant electrons in RNiO2 is substantially stronger than previously thought. The dominant hybridization comes from an interstitial-s orbital rather than rare-earth-d orbitals, due to a large inter-cell hopping. Because of the hybridization, Ni local moment is screened by itinerant electrons and the critical U_Ni for long-range magnetic ordering is increased. Our work shows that the electronic structure of RNiO2 is distinct from CaCuO2, implying that the observed superconductivity in infinite-layer nickelates does not emerge from a doped Mott insulator.
We point out the generic competition between the Hunds coupling and the spin-orbit coupling in correlated materials, and this competition leads to an electronic dilemma between the Hunds metal and the relativistic insulators. Hunds metals refer to the fate of the would-be insulators where the Hunds coupling suppresses the correlation and drives the systems into correlated metals. Relativistic Mott insulators refer to the fate of the would-be metals where the relativistic spin-orbit coupling enhances the correlation and drives the systems into Mott insulators. These contradictory trends are naturally present in many correlated materials. We study the competition between Hunds coupling and spin-orbit coupling in correlated materials and explore the interplay and the balance from these two contradictory trends. The system can become a spin-orbit-coupled Hunds metal or a Hunds assisted relativistic Mott insulator. Our observation could find a broad application and relevance to many correlated materials with multiple orbitals.
Based on a two-orbital honeycomb lattice model and random phase approximation, we investigate the pairing symmetry of the Ni-based transition-metal trichalcogenide. We find that an I-wave (A2g) state and a chiral d-wave state are dominant and nearly degenerate for typical electron and hole dopings. These two states carry nontrivial topological properties, which are manifested by the presence of chiral edge states in the d+id-wave state and dispersionless Andreev bound state at zero energy in the I-wave state. Ni-based transition-metal trichalcogenides provide us a new platform to study the exotic phenomena emerged from electron-electron correlation effects.
Majorana fermions, quantum particles with non-Abelian exchange statistics, are not only of fundamental importance, but also building blocks for fault-tolerant quantum computation. Although certain experimental breakthroughs for observing Majorana fermions have been made recently, their conclusive dection is still challenging due to the lack of proper material properties of the underlined experimental systems. Here we propose a new platform for Majorana fermions based on edge states of certain non-topological two-dimensional semiconductors with strong spin-orbit coupling, such as monolayer group-VI transition metal dichalcogenides (TMD). Using first-principles calculations and tight-binding modeling, we show that zigzag edges of monolayer TMD can host well isolated single edge band with strong spin-orbit coupling energy. Combining with proximity induced s-wave superconductivity and in-plane magnetic fields, the zigzag edge supports robust topological Majorana bound states at the edge ends, although the two-dimensional bulk itself is non-topological. Our findings points to a controllable and integrable platform for searching and manipulating Majorana fermions.
Negative compressibility is a sign of thermodynamic instability of open or non-equilibrium systems. In quantum materials consisting of multiple mutually coupled subsystems, the compressibility of one subsystem can be negative if it is countered by positive compressibility of the others. Manifestations of this effect have so far been limited to low-dimensional dilute electron systems. Here we present evidence from angle-resolved photoemission spectroscopy (ARPES) for negative electronic compressibility (NEC) in the quasi-three-dimensional (3D) spin-orbit correlated metal (Sr1-xLax)3Ir2O7. Increased electron filling accompanies an anomalous decrease of the chemical potential, as indicated by the overall movement of the deep valence bands. Such anomaly, suggestive of NEC, is shown to be primarily driven by the lowering in energy of the conduction band as the correlated bandgap reduces. Our finding points to a distinct pathway towards an uncharted territory of NEC featuring bulk correlated metals with unique potential for applications in low-power nanoelectronics and novel metamaterials.