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Register a new userHofstadters butterfly in moire superlattices: A fractal quantum Hall effect
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Electrons moving through a spatially periodic lattice potential develop a quantized energy spectrum consisting of discrete Bloch bands. In two dimensions, electrons moving through a magnetic field also develop a quantized energy spectrum, consisting of highly degenerate Landau energy levels. In 1976 Douglas Hofstadter theoretically considered the intersection of these two problems and discovered that 2D electrons subjected to both a magnetic field and a periodic electrostatic potential exhibit a self-similar recursive energy spectrum. Known as Hofstadters butterfly, this complex spectrum results from a delicate interplay between the characteristic lengths associated with the two quantizing fields, and represents one of the first quantum fractals discovered in physics. In the decades since, experimental attempts to study this effect have been limited by difficulties in reconciling the two length scales. Typical crystalline systems (<1 nm periodicity) require impossibly large magnetic fields to reach the commensurability condition, while in artificially engineered structures (>100 nm), the corresponding fields are too small to completely overcome disorder. Here we demonstrate that moire superlattices arising in bilayer graphene coupled to hexagonal boron nitride provide a nearly ideal-sized periodic modulation, enabling unprecedented experimental access to the fractal spectrum. We confirm that quantum Hall effect features associated with the fractal gaps are described by two integer topological quantum numbers, and report evidence of their recursive structure. Observation of Hofstadters spectrum in graphene provides the further opportunity to investigate emergent behaviour within a fractal energy landscape in a system with tunable internal degrees of freedom.
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Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moire materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the Mott insulator, generalized Wigner crystals, stripe phases and continuous Mott transition, have been demonstrated. However, nontrivial band topology has remained elusive. Here we report the observation of a quantum anomalous Hall (QAH) effect in AB-stacked MoTe2/WSe2 moire heterobilayers. Unlike in the AA-stacked structures, an out-of-plane electric field controls not only the bandwidth but also the band topology by intertwining moire bands centered at different high-symmetry stacking sites. At half band filling, corresponding to one particle per moire unit cell, we observe quantized Hall resistance, h/e2 (with h and e denoting the Plancks constant and electron charge, respectively), and vanishing longitudinal resistance at zero magnetic field. The electric-field-induced topological phase transition from a Mott insulator to a QAH insulator precedes an insulator-to-metal transition; contrary to most known topological phase transitions, it is not accompanied by a bulk charge gap closure. Our study paves the path for discovery of a wealth of emergent phenomena arising from the combined influence of strong correlation and topology in semiconductor moire materials.
We find a systematic reappearance of massive Dirac features at the edges of consecutive minibands formed at magnetic fields B_{p/q}= pphi_0/(qS) providing rational magnetic flux through a unit cell of the moire superlattice created by a hexagonal substrate for electrons in graphene. The Dirac-type features in the minibands at B=B_{p/q} determine a hierarchy of gaps in the surrounding fractal spectrum, and show that these minibands have topological insulator properties. Using the additional $q$-fold degeneracy of magnetic minibands at B_{p/q}, we trace the hierarchy of the gaps to their manifestation in the form of incompressible states upon variation of the carrier density and magnetic field.
We present a scheme to generate an artificial gauge field for the system of neutral bosons, represented by polaritons in micropillars arranged into a square lattice. The splitting between the two polarizations of the micropillars breaks the time-reversal symmetry (TRS) and results in the effective phase-dependent hopping between cavities. This can allow for engineering a nonzero flux on the plaquette, corresponding to an artificial magnetic field. Changing the phase, we observe a characteristic Hofstadters butterfly pattern and the appearance of chiral edge states for a finite-size structure. For long-lived polaritons, we show that the propagation of wave packets at the edge is robust against disorder. Moreover, given the inherent driven-dissipative nature of polariton lattices, we find that the system can exhibit topological lasing, recently discovered for active ring cavity arrays. The results point to a static way to realize artificial magnetic field in neutral spinful systems, avoiding the periodic modulation of the parameters or strong spin-orbit interaction. Ultimately, the described system can allow for high-power topological single-mode lasing which is robust to imperfections.
The formation of a superstructure - with a related Moire pattern - plays a crucial role in the extraordinary optical and electronic properties of twisted bilayer graphene, including the recently observed unconventional superconductivity. Here we put forward a novel, interdisciplinary approach to determine the Moire angle in twisted bilayer graphene based on the photonic spin Hall effect. We show that the photonic spin Hall effect exhibits clear fingerprints of the underlying Moire pattern, and the associated light beam shifts are well beyond current experimental sensitivities in the near-infrared and visible ranges. By discovering the dependence of the frequency position of the maximal photonic spin Hall effect shift on the Moire angle, we argue that the latter could be unequivocally accessed via all-optical far-field measurements. We also disclose that, when combined with the Goos-Hanchen effect, the spin Hall effect of light enables the complete determination of the electronic conductivity of the bilayer. Altogether our findings demonstrate that sub-wavelength spin-orbit interactions of light provide a unprecedented toolset for investigating optoelectronic properties of multilayer two-dimensional van der Waals materials.
Moire superlattices in van der Waals (vdW) heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. A lack of a simple way to characterize moire superlattices has impeded progress in the field. In this work we outline a simple, room-temperature, ambient method to visualize real-space moire superlattices with sub-5 nm spatial resolution in a variety of twisted vdW heterostructures including but not limited to conducting graphene, insulating boron nitride and semiconducting transition metal dichalcogenides. Our method utilizes piezoresponse force microscopy, an atomic force microscope modality which locally measures electromechanical surface deformation. We find that all moire superlattices, regardless of whether the constituent layers have inversion symmetry, exhibit a mechanical response to out-of-plane electric fields. This response is closely tied to flexoelectricity wherein electric polarization and electromechanical response is induced through strain gradients present within moire superlattices. Moire superlattices of 2D materials thus represent an interlinked network of polarized domain walls in a non-polar background matrix.
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