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Register a new userQuantum anomalous Hall effect from intertwined moire bands
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Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moire materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the Mott insulator, generalized Wigner crystals, stripe phases and continuous Mott transition, have been demonstrated. However, nontrivial band topology has remained elusive. Here we report the observation of a quantum anomalous Hall (QAH) effect in AB-stacked MoTe2/WSe2 moire heterobilayers. Unlike in the AA-stacked structures, an out-of-plane electric field controls not only the bandwidth but also the band topology by intertwining moire bands centered at different high-symmetry stacking sites. At half band filling, corresponding to one particle per moire unit cell, we observe quantized Hall resistance, h/e2 (with h and e denoting the Plancks constant and electron charge, respectively), and vanishing longitudinal resistance at zero magnetic field. The electric-field-induced topological phase transition from a Mott insulator to a QAH insulator precedes an insulator-to-metal transition; contrary to most known topological phase transitions, it is not accompanied by a bulk charge gap closure. Our study paves the path for discovery of a wealth of emergent phenomena arising from the combined influence of strong correlation and topology in semiconductor moire materials.
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We discuss anomalous fractional quantum Hall effect that exists without external magnetic field. We propose that excitations in such systems may be described effectively by non-interacting particles with the Hamiltonians defined on the Brillouin zone with a branch cut. Hall conductivity of such a system is expressed through the one-particle Green function. We demonstrate that for the Hamiltonians of the proposed type this expression takes fractional values times Klitzing constant. Possible relation of the proposed construction with degeneracy of ground state is discussed as well.
We have investigated magnetotransport properties and the topological electronic structure of the half-Heusler compound TbPtBi. Our experiments reveal an exceptionally large anomalous Hall effect (AHE) in the canted antiferromagnetic state of TbPtBi with the anomalous Hall angle (AHA) reaching ~0.68-0.76, which is a few times larger than the previously reported record in GdPtBi. First-principles electronic structure and the associated anomalous Hall conductivity were computed in order to interpret the experimental results. Our analysis shows that the AHE in TbPtBi does not originate from the Weyl points but that it is driven by the large net Berry curvature produced by the anticrossing of spin-split bands near the Fermi level in TbPtBi.
Collective plasma excitations in moire flat bands display unique properties reflecting strong electron-electron interactions and unusual carrier dynamics in these systems. Unlike the conventional two-dimensional plasmon modes, dispersing as $sqrt{k}$ at low frequencies and plunging into particle-hole continuum at higher frequencies, the moire plasmons pierce through the flat-band continuum and acquire a strong over-the-band character. Due to the complex structure of the moire superlattice unit cell, the over-the-band plasmons feature several distinct branches connected through zone folding in the superlattice Brillouin zone. Using a toy Hubbard model for the correlated insulating order in a flat band, we predict that these high-frequency modes become strongly dipole-active upon the system undergoing charge ordering, with the low-frequency modes gapped out within the correlated insulator gap. Strong dipole moments and sensitivity to charge order make these modes readily accessible by optical measurements, providing a convenient diagnostic of the correlated states.
The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The quantum Hall effect is shown on epitaxial graphene monolayers that were deliberately grown over substrate steps and subjected to harsh processing procedures, demonstrating the robustness of the epitaxial graphene monolayers and the immunity of their transport properties to temperature, contamination and substrate imperfections. The mobility of the monolayer C-face sample is 19,000 cm^2/Vs. This is an important step towards the realization of epitaxial graphene based electronics.
A short review paper for the quantum anomalous Hall effect. A substantially extended one is published as Adv. Phys. 64, 227 (2015).
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