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Register a new userBackaction of a charge detector on a double quantum dot
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We develop a master equation approach to study the backaction of quantum point contact (QPC) on a double quantum dot (DQD) at zero bias voltage. We reveal why electrons can pass through the zero-bias DQD only when the bias voltage across the QPC exceeds a threshold value determined by the eigenstate energy difference of the DQD. This derived excitation condition agrees well with experiments on QPC-induced inelastic electron tunneling through a DQD [S. Gustavsson et al., Phys. Rev. Lett. 99, 206804(2007)]. Moreover, we propose a new scheme to generate a pure spin current by the QPC in the absence of a charge current.
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We propose to continuously monitor a charge qubit by utilizing a T-shaped double quantum dot detector, in which the qubit and double dot are arranged in such a unique way that the detector turns out to be particularly susceptible to the charge states of the qubit. Special attention is paid to the regime where acquisition of qubit information and backaction upon the measured system exhibit nontrivial correlation. The intrinsic dynamics of the qubit gives rise to dynamical blockade of tunneling events through the detector, resulting in a super-Poissonian noise. However, such a pronounced enhancement of detectors shot noise does not necessarily produce a rising dephasing rate. In contrast, an inhibition of dephasing is entailed by the reduction of information acquisition in the dynamically blockaded regimes. We further reveal the important impact of the charge fluctuations on the measurement characteristics. Noticeably, under the condition of symmetric junction capacitances the noise pedestal of circuit current is completely suppressed, leading to a divergent signal-to-noise ratio, and eventually to a violation of the Korotkov-Averin bound in quantum measurement. Our study offers the possibility for a double dot detector to reach the quantum limited effectiveness in a transparent manner.
We demonstrate single-electron pumping in a gate-defined carbon nanotube double quantum dot. By periodic modulation of the potentials of the two quantum dots we move the system around charge triple points and transport exactly one electron or hole per cycle. We investigate the pumping as a function of the modulation frequency and amplitude and observe good current quantization up to frequencies of 18 MHz where rectification effects cause the mechanism to break down.
We propose to monitor a qubit with a double-dot (DD) resonant-tunneling detector, which can operate at higher temperatures than a single-dot detector. In order to assess the effectiveness of this device, we derive rate equations for the density matrix of the entire system. We show that the signal-to-noise ratio can be greatly improved by a proper choice of the parameters and location of the detector. We demonstrate that quantum interference effects within the DD detector play an important role in the measurement. Surprisingly, these effects produce a systematic measurement error, even when the entire system is in a stationary state.
We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoirs, giving excellent agreement with the experiment. The electron spin is randomized by the exchange process, thus facilitating fast, gate-controlled spin initialization. At the same time, this process sets an intrinsic upper limit to the spin relaxation time.
It was proposed that a double quantum dot can be used to be a detector of spin bias. Electron transport through a double quantum dot is investigated theoretically when a pure spin bias is applied on two conducting leads contacted to the quantum dot. It is found that the spin polarization in the left and right dots may be induced spontaneously while the intra-dot levels are located within the spin bias window and breaks the left-right symmetry of the two quantum dots. As a result, a large current emerges. For an open external circuit an charge bias instead of a charge current will be induced in equilibrium, which is believed to be measurable according to the current nanotechnology. This method may provide a practical and whole electrical approach to detect the spin bias (or the spin current) by measuring the charge bias or current in a double quantum dot.
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