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Qubit detection with a T-shaped double quantum dot detector

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 Added by JunYan Luo
 Publication date 2015
  fields Physics
and research's language is English




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We propose to continuously monitor a charge qubit by utilizing a T-shaped double quantum dot detector, in which the qubit and double dot are arranged in such a unique way that the detector turns out to be particularly susceptible to the charge states of the qubit. Special attention is paid to the regime where acquisition of qubit information and backaction upon the measured system exhibit nontrivial correlation. The intrinsic dynamics of the qubit gives rise to dynamical blockade of tunneling events through the detector, resulting in a super-Poissonian noise. However, such a pronounced enhancement of detectors shot noise does not necessarily produce a rising dephasing rate. In contrast, an inhibition of dephasing is entailed by the reduction of information acquisition in the dynamically blockaded regimes. We further reveal the important impact of the charge fluctuations on the measurement characteristics. Noticeably, under the condition of symmetric junction capacitances the noise pedestal of circuit current is completely suppressed, leading to a divergent signal-to-noise ratio, and eventually to a violation of the Korotkov-Averin bound in quantum measurement. Our study offers the possibility for a double dot detector to reach the quantum limited effectiveness in a transparent manner.

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71 - T. Gilad , S.A. Gurvitz 2006
We propose to monitor a qubit with a double-dot (DD) resonant-tunneling detector, which can operate at higher temperatures than a single-dot detector. In order to assess the effectiveness of this device, we derive rate equations for the density matrix of the entire system. We show that the signal-to-noise ratio can be greatly improved by a proper choice of the parameters and location of the detector. We demonstrate that quantum interference effects within the DD detector play an important role in the measurement. Surprisingly, these effects produce a systematic measurement error, even when the entire system is in a stationary state.
Real-time detection of single electron tunneling through a T-shaped double quantum dot is simulated, based on a Monte Carlo scheme. The double dot is embedded in a dissipative environment and the presence of electrons on the double dot is detected with a nearby quantum point contact. We demonstrate directly the bunching behavior in electron transport, which leads eventually to a super-Poissonian noise. Particularly, in the context of full counting statistics, we investigate the essential difference between the dephasing mechanisms induced by the quantum point contact detection and the coupling to the external phonon bath. A number of intriguing noise features associated with various transport mechanisms are revealed.
We investigate the thermoelectric properties of a T-shaped double quantum dot system described by a generalized Anderson Hamiltonian. The systems electrical conduction (G) and the fundamental thermoelectric parameters such as the Seebeck coefficient ($S$) and the thermal conductivity ($kappa$), along with the systems thermoelectric figure of merit (ZT) are numerically estimated based on a Greens function formalism that includes contributions up to the Hartree-Fock level. Our results account for finite onsite Coulomb interaction terms in both component quantum dots and discuss various ways leading to an enhanced thermoelectric figure of merit for the system. We demonstrate that the presence of Fano resonances in the Coulomb blockade regime is responsible for a strong violation of the Wiedemann-Franz law and a considerable enhancement of the systems figure of merit ($ZT$).
155 - I. Tifrea , G. Pal , 2011
We developed a set of equations to calculate the electronic Greens functions in a T-shaped multi-quantum dot system using the equation of motion method. We model the system using a generalized Anderson Hamiltonian which accounts for {em finite} intradot on-site Coulomb interaction in all component dots as well as for the interdot electron tunneling between adjacent quantum dots. Our results are obtained within and beyond the Hartree-Fock approximation and provide a path to evaluate all the electronic correlations in the multi-quantum dot system in the Coulomb blockade regime. Both approximations provide information on the physical effects related to the finite intradot on-site Coulomb interaction. As a particular example for our generalized results, we considered the simplest T-shaped system consisting of two dots and proved that our approximation introduces important corrections in the detector and side dots Greens functions, and implicitly in the evaluation of the systems transport properties. The multi-quantum dot T-shaped setup may be of interest for the practical realization of qubit states in quantum dots systems.
Based on Keldysh non-equilibrium Green function method, we have investigated spin current production in a hybrid T-shaped device, consisting of a central quantum dot connected to the leads and a side dot which only couples to the central dot. The topology of this structure allows for quantum interference of the different paths that go across the device, yielding Fano resonances in the spin dependent transport properties. Correlation effects are taken into account at the central dot and handled within a mean field approximation. Its interplay with the Fano effect is analyzed in the strong coupling regime. Non-vanishing spin currents are only obtained when the leads are ferromagnetic, the current being strongly dependent on the relative orientation of the lead polarizations. We calculate the conductance (spin and charge) by numerically differentiating the current, and a rich structure is obtained as a manifestation of quantum coherence and correlation effects. Increase of the Coulomb interaction produces localization of states at the side dot, largely suppressing Fano resonances. The interaction is also responsible for the negative values of the spin conductance in some regions of the voltage near resonances, effect which is the spin analog of the Esaki tunnel diode. We also analyze control of the currents via gate voltages applied to the dots, possibility which is interesting for practical operations.
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