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Register a new userTest of CZT Detectors with Different Pixel Pitches and Thicknesses
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Qiang Li
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The Modified Horizontal Bridgman (MHB) process produces Cadmium Zinc Telluride (CZT) crystals with high yield and excellent homogeneity. Various groups,including our own, previously reported on the test of 2x2x0.5 cm3 MHB CZT detectors grown by the company Orbotech and read out with 8x8 pixels. In this contribution, we describe the optimization of the photolithographic process used for contacting the CZT detector with pixel contacts. The optimized process gives a high yield of good pixels down to pixel diameters/pitches of 50 microns. Furthermore, we discuss the performance of 0.5 cm and 0.75 cm thick detectors contacted with 64 and 225 pixel read out with the RENA-3 ASICs from the company NOVA R&D.
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The main methods grown Cadmium Zinc Telluride (CZT) crystals with high yield and excellent homogeneity are Modified Horizontal Bridgman (MHB) and High Pressure Bridgman (HPB) processes, respectively. In this contribution, the readout system based on two 32-channel NCI-ASICs for pixellated CZT detector arrays has been developed and tested. The CZT detectors supplied by Orbotech (MHB) and eV products (HPB) are tested by NCI-ASIC readout system. The CZT detectors have an array of 8x8 or 11x11 pixel anodes fabricated on the anode surface with the area up to 2 cm x2 cm and the thickness of CZT detectors ranges from 0.5 cm to 1 cm. Energy spectra resolution and electron mobility-lifetime products of 8x8 pixels CZT detector with different thicknesses have been investigated.
The silicon pixel vertex detector is one of the key elements of the BTeV spectrometer. Detector prototypes were tested in a beam at Fermilab. We report here on the measured spatial resolution as a function of the incident angles for different sensor-readout electronics combinations. We compare the results with predictions from our Monte Carlo simulation.
Due to be launched in late 2021, the Imaging X-Ray Polarimetry Explorer (IXPE) is a NASA Small Explorer mission designed to perform polarization measurements in the 2-8 keV band, complemented with imaging, spectroscopy and timing capabilities. At the heart of the focal plane is a set of three polarization-sensitive Gas Pixel Detectors (GPD), each based on a custom ASIC acting as a charge-collecting anode. In this paper we shall review the design, manufacturing, and test of the IXPE focal-plane detectors, with particular emphasis on the connection between the science drivers, the performance metrics and the operational aspects. We shall present a thorough characterization of the GPDs in terms of effective noise, trigger efficiency, dead time, uniformity of response, and spectral and polarimetric performance. In addition, we shall discuss in detail a number of instrumental effects that are relevant for high-level science analysis -- particularly as far as the response to unpolarized radiation and the stability in time are concerned.
We present results from the flight of two prototype CZT detectors on a scientific balloon payload in September 2000. The first detector, referred to as ``CZT1, consisted of a 10 mm x 10 mm x 2 mm CZT crystal with a single gold planar electrode readout. This detector was shielded by a combination of a passive collimator surrounded by plastic scintillator and a thick BGO crystal in the rear. The second detector, ``CZT2, comprised two 10 mm x 10 mm x 5 mm CZT crystals, one made of eV Products high pressure Bridgman material and the other of IMARAD horizontal Bridgman material, each fashioned with a 4 x 4 array of gold pixels on a 2.5 mm pitch. The pixellated detectors were flip-chip-mounted side by side and read out by a 32-channel ASIC. This detector was also shielded by a passive/plastic collimator in the front, but used only additional passive/plastic shielding in the rear. Both experiments were flown from Ft. Sumner, NM on September 19, 2000 on a 24 hour balloon flight. CZT1 recorded a non-vetoed background level at 100 keV of ~1e-3 cts/cm2/s/keV. Raising the BGO threshold from 50 keV to ~1 MeV produced only an 18% increase in this level. CZT2 recorded a background at 100 keV of ~4e-3 cts/cm2/s/keV in the eV Products detector and ~6e-3 cts/cm2/s/keV in the IMARAD detector. Both CZT1 and CZT2 spectra were in basic agreement with Monte Carlo simulations, though both recorded systematically higher count rates at high energy than predicted. No lines were observed, indicating that neutron capture reactions, at least those producing decay lines at a few 100 keV, are not significant components of the CZT background. Comparison of the CZT1 and CZT2 spectra indicates that passive/plastic shielding may provide adequately low background levels for many applications.
Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (~28 um), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.
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