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Register a new userFerroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses
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Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (~28 um), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.
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Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The success of manufacturing wafer-scale, high-quality, thin films of LN on insulator (LNOI), accompanied with breakthroughs in nanofabrication techniques, have made high-performance integrated nanophotonic components possible. With rapid development in the past few years, some of these thin-film LN devices, such as optical modulators and nonlinear wavelength converters, have already outperformed their legacy counterparts realized in bulk LN crystals. Furthermore, the nanophotonic integration enabled ultra-low-loss resonators in LN, which unlocked many novel applications such as optical frequency combs and quantum transducers. In this Review, we cover -- from basic principles to the state of the art -- the diverse aspects of integrated thin-film LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optics. We also identify challenges that this platform is currently facing and point out future opportunities. The field of integrated LNOI photonics is advancing rapidly and poised to make critical impacts on a broad range of applications in communication, signal processing, and quantum information.
Erbium-doped lithium niobate on insulator (LNOI) laser plays an important role in the complete photonic integrated circuits (PICs). Here, we demonstrate an integrated tunable whisper galley single mode laser (WGSML) by making use of a pair of coupled microdisk and microring on LNOI. A 974 nm single-mode pump light can have an excellent resonance in the designed microdisk, which is beneficial to the whisper gallery mode (WGM) laser generation. The WGSML at 1560.40 nm with a maximum 31.4 dB side mode suppression ratio (SMSR) has been achieved. By regulating the temperature, WGSMLs output power increased and the central wavelength can be changed from 1560.30 nm to 1560.40 nm. Whats more, 1560.60 nm and 1565.00 nm WGSMLs have been achieved by changing the coupling gap width between microdisk and microring. We can also use the electro-optic effect of LNOI to obtain more accurate adjustable WGSMLs in further research.
Periodically poled thin-film lithium niobate (TFLN) waveguides have emerged as a leading platform for highly efficient frequency conversion in the near-infrared. However, the commonly used silica bottom-cladding results in high absorption loss at wavelengths beyond 2.5 $mu$m. In this work, we demonstrate efficient frequency conversion in a TFLN-on-sapphire platform, which features high transparency up to 4.5 $mu$m. In particular, we report generating mid-infrared light up to 3.66 $mu$m via difference-frequency generation of a fixed 1-$mu$m source and a tunable telecom source, with normalized efficiencies up to 200%/W-cm$^2$. These results show TFLN-on-sapphire to be a promising platform for integrated nonlinear nanophotonics in the mid-infrared.
Materials with strong $chi^{(2)}$ optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss $chi^{(2)}$ materials remains challenging and limits the threshold power of on-chip $chi^{(2)}$ OPO. Here we report the first on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase matched, high-quality microring resonator, whose threshold power ($sim$30 $mu$W) is 400 times lower than that in previous $chi^{(2)}$ integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained at a pump power of 93 $mu$W. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase matching and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides an potential platform for realizing photonic neural networks.
Lithium niobate on insulator (LNOI) is an emerging photonic platform with great promises for future optical communications, nonlinear optics and microwave photonics. An important integrated photonic building block, active waveguide amplifiers, however, is still missing in the LNOI platform. Here we report an efficient and compact waveguide amplifier based on erbium-doped LNOI waveguides, realized by a sequence of erbium-doped crystal growth, ion slicing and lithography-based waveguide fabrication. Using a compact 5-mm-long waveguide, we demonstrate on-chip net gain of > 5 dB for 1530-nm signal light with a relatively low pump power of 21 mW at 980 nm. The efficient LNOI waveguide amplifiers could become an important fundamental element in future lithium niobate photonic integrated circuits.
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