Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we theoretically study here junctions built out of non-collinear antiferromagnets. We demonstrate a large and robust magnetoresistance and spin-transfer torque capable of ultrafast switching between parallel and anti-parallel states of the junction. In addition, we show that the non-collinear order results in a spin-transfer torque that is in several key aspects different from the spin-transfer torque in ferromagnetic junctions.
The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of magnetic layer composition by considering $text{Fe}_text{x}text{Co}_{text{1-x}}$ alloys. Further, we compare the TSTT to the bias voltage driven STT and discuss the requirements for a possible thermal switching. For example, only for very thin barriers of 3 monolayers MgO a thermal switching is imaginable. However, even for such a thin barrier the TSTT is still too small for switching at the moment and further optimization is needed. In particular, the TSTT strongly depends on the composition of the ferromagentic layer. In our current study it turns out that at the chosen thickness of the ferromagnetic layer pure Fe gives the highest thermal spin-transfer torque.
The dependence of tunneling magnetoresistance and spin-transfer torque in FeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage are investigated ab initio. We find that the tunneling magnetoresistance decreases with the Co concentration in contradiction with previous calculations but in agreement with recent experiments. This dependence is explained from bulk properties of the alloys. By using a realistic description of the disorder in the alloys we can show that even small amounts of disorder lead to a drastic drop in the tunneling magnetoresistance. This provides a quantitative explanation of the difference between calculated and measured values. The spin-transfer torque shows a linear voltage dependence for the in-plane component and a quadratic for the out-of-plane component for all concentrations at small bias voltages. In particular, the linear slope of the in-plane torque is independent of the concentration. For high bias voltages the in-plane torque shows a strong nonlinear deviation from the linear slope for high Co concentrations. This is explained from the same effects which govern the tunneling magnetoresistance.
Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with special characteristics is becoming more and more prevalent. We now present a full quantum investigation of the magnetoresistance and the spin transfer torque in a domain wall, which is embedded in a nano-contact of Ni$_{80}$Fe$_ {20}$, where the size of the domain wall becomes a relevant tunable parameter. The dependence on the domain wall width as well as the spatial dependence of the torque along the domain wall can be analyzed in complete detail. The magnetoresistance drops with increasing domain wall width as expected, but also shows characteristic modulations and points of resonant spin-flip transmission. The spin transfer torque has both significant in-plane and out-of-plane contributions even without considering relaxation. A closer inspection identifies contributions from the misalignment of the spin density for short domain walls as well as an effective gauge field for longer domain walls, both of which oscillate along the domain wall.
We calculate the spin-transfer torque in Fe/MgO/Fe tunnel junctions and compare the results to those for all-metallic junctions. We show that the spin-transfer torque is interfacial in the ferromagnetic layer to a greater degree than in all-metallic junctions. This result originates in the half metallic behavior of Fe for the $Delta_1$ states at the Brillouin zone center; in contrast to all-metallic structures, dephasing does not play an important role. We further show that it is possible to get a component of the torque that is out of the plane of the magnetizations and that is linear in the bias. However, observation of such a torque requires highly ideal samples. In samples with typical interfacial roughness, the torque is similar to that in all-metallic multilayers, although for different reasons.
Antiferromagnetic materials are promising platforms for next-generation spintronics owing to their fast dynamics and high robustness against parasitic magnetic fields. However, nanoscale imaging of the magnetic order in such materials with zero net magnetization remains a major experimental challenge. Here we show that non-collinear antiferromagnetic spin textures can be imaged by probing the magnetic noise they locally produce via thermal populations of magnons. To this end, we perform nanoscale, all-optical relaxometry with a scanning quantum sensor based on a single nitrogen-vacancy (NV) defect in diamond. Magnetic noise is detected through an increase of the spin relaxation rate of the NV defect, which results in an overall reduction of its photoluminescence signal under continuous laser illumination. As a proof-of-concept, the efficiency of the method is demonstrated by imaging various spin textures in synthetic antiferromagnets, including domain walls, spin spirals and antiferromagnetic skyrmions. This imaging procedure could be extended to a large class of intrinsic antiferromagnets and opens up new opportunities for studying the physics of localized spin wave modes for magnonics.