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Electron--electron repulsion, on the one hand, can result in bound pair, which has heavy effective mass. On the other hand, it is also the cause of Mott insulator. We study the effect of a staggered magnetic field on a Hubbard model. We find that a bound pair with large energy bandwidth can be formed under the resonant staggered field, being the half of Hubbard repulsion strength. Accordingly, the system exhibits following dynamical behaviors: (i) When an electric field is applied, fast bound pair Bloch oscillation occurs, while a single electron is frozen. (ii) When a quenching resonant field is applied to an initial antiferromagnetic Mott insulating state, the final state becomes doublon conducting state manifested by the non-zero $eta$ correlator and large charge fluctuation. Our finding indicates that the cooperation of electron-electron correlation and modulated external field can induce novel quench dynamics.
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We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.
Lacunar spinel GaTa$_4$Se$_8$ is a unique example of spin-orbit coupled Mott insulator described by molecular $j_{text{eff}}!=!3/2$ states. It becomes superconducting at T$_c$=5.8K under pressure without doping. In this work, we show, this pressure-induced superconductivity is a realization of a new type topological phase characterized by spin-2 Cooper pairs. Starting from first-principles density functional calculations and random phase approximation, we construct the microscopic model and perform the detailed analysis. Applying pressure is found to trigger the virtual interband tunneling processes assisted by strong Hund coupling, thereby stabilizing a particular $d$-wave quintet channel. Furthermore, we show that its Bogoliubov quasiparticles and their surface states exhibit novel topological nature. To verify our theory, we propose unique experimental signatures that can be measured by Josephson junction transport and scanning tunneling microscope. Our findings open up new directions searching for exotic superconductivity in spin-orbit coupled materials.
A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems but their origins are as yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr$_3$(Ir$_{1-x}$Ru$_x$)$_2$O$_7$ which drives the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT such as power law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators.
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