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Register a new userColossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition
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We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.
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Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved {mu}-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics.
The persistent proximity of insulating and metallic phases, a puzzling characterestic of manganites, is argued to arise from the self organization of the twofold degenerate e_g orbitals of Mn into localized Jahn-Teller(JT) polaronic levels and broad band states due to the large electron - JT phonon coupling present in them. We describe a new two band model with strong correlations and a dynamical mean-field theory calculation of equilibrium and transport properties. These explain the insulator metal transition and colossal magnetoresistance quantitatively, as well as other consequences of two state coexistence.
Here we investigate antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$, a nonsymmorphic Zintl phase. Our electrical transport data show that Eu$_{5}$In$_{2}$Sb$_{6}$ is remarkably insulating and exhibits an exceptionally large negative magnetoresistance, which is consistent with the presence of magnetic polarons. From {it ab initio} calculations, the paramagnetic state of Eu$_{5}$In$_{2}$Sb$_{6}$ is a topologically nontrivial semimetal within the generalized gradient approximation (GGA), whereas an insulating state with trivial topological indices is obtained using a modified Becke-Johnson potential. Notably, GGA+U calculations suggest that the antiferromagnetic phase of Eu$_{5}$In$_{2}$Sb$_{6}$ may host an axion insulating state. Our results provide important feedback for theories of topological classification and highlight the potential of realizing clean magnetic narrow-gap semiconductors in Zintl materials.
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This sluggish transition is shown to occur at 35 GPa. Transport measurements show no evidence of superconductivity to the lowest measured temperature (~ 2 K). The structure results presented here differ from earlier in-situ work that subjected the sample to a different pressure state, suggesting that in NiPS3 the phase stability fields are highly dependent on strain. It is suggested that careful control of the strain is essential when studying the electronic and magnetic properties of layered van der Waals solids.
We report here the magneto-transport properties of the newly synthesized Heusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structure belonging to Pm-3m space group. The sample is found to be paramagnetic down to 2 K with metallic character. On application of magnetic field, a significantly large increase in resistivity is observed which corresponds to magnetoresistance as high as 112% at 150 kOe of field at the lowest temperature. Most remarkably, the sample shows negative temperature coefficient of resistivity below about 50 K under the application of field gretare than or equal to 80 kOe, signifying a field-induced metal to `insulating transition. The observed magnetoresistance follows Kohlers rule below 20 K indicating the validity of the semiclassical model of electronic transport in metal with a single relaxation time. A multi-band model for electronic transport, originally proposed for semimetals, is found to be appropriate to describe the magneto-transport behavior of the sample.
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