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Register a new userElectrical and Thermal Transport Properties of the beta-Pyrochlore Oxide CsW2O6
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We report the electrical resistivity, thermoelectric power, and thermal conductivity of single-crystalline and sintered samples of the 5d pyrochlore oxide CsW2O6. The electrical resistivity of the single crystal is 3 mohm cm at 295 K and gradually increases with decreasing temperature above 215 K (Phase I). The thermoelectric power of the single-crystalline and sintered samples shows a constant value of approximately -60 uV K-1 in Phase I. These results reflect that the electron conduction by W 5d electrons in Phase I is incoherent and in the hopping regime, although a band gap does not open at the Fermi level. The thermal conductivity in Phase I of both samples is considerably low, which might be due to the rattling of Cs+ ions. In Phase II below 215 K, the electrical resistivity and the absolute value of thermoelectric power of both samples strongly increase with decreasing temperature, corresponding to a transition to a semiconducting state with a band gap open at the Fermi level, while the thermal conductivity in Phase II is smaller than that in Phase I.
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Polycrystalline Nd2Ru2O7 samples have been prepared and examined using a combination of structural, magnetic, and electrical and thermal transport studies. Analysis of synchrotron X-ray and neutron diffraction patterns suggests some site disorder on the A-site in the pyrochlore sublattice: Ru substitutes on the Nd-site up to 7.0(3)%, regardless of the different preparative conditions explored. Intrinsic magnetic and electrical transport properties have been measured. Ru 4d spins order antiferromagnetically at 143 K as seen both in susceptibility and specific heat, and there is a corresponding change in the electrical resistivity behaviour. A second antiferromagnetic ordering transition seen below 10 K is attributed to ordering of Nd 4f spins. Nd2Ru2O7 is an electrical insulator, and this behaviour is believed to be independent of the Ru-antisite disorder on the Nd site. The electrical properties of Nd2Ru2O7 are presented in the light of data published on all A2Ru2O7 pyrochlores, and we emphasize the special structural role that Bi3+ ions on the A-site play in driving metallic behaviour. High-temperature thermoelectric properties have also been measured. When considered in the context of known thermoelectric materials with useful figures-of-merit, it is clear that Nd2Ru2O7 has excessively high electrical resistivity which prevents it from being an effective thermoelectric. A method for screening candidate thermoelectrics is suggested.
Na-based osmium oxide pyrochlore was synthesized for the first time by an ion-exchange method. KOs2O6 was used as a host compound. Elelectron probe micro-analysis, synchrotron x-ray diffraction analysis, and thermo-gravimetric analysis confirmed its structure not as the beta-type but as the defect-type pyrochlore. The composition was identified as Na1.4Os2O6.H2O. Electrical resistivity, heat capacity, and magnetization measurements of the polycrystalline Na1.4Os2O6.H2O clarified absence of superconductivity above 2 K, being in contrast to what were found for the beta-pyrochlore AOs2O6 (A = Cs, Rb, K). Sommerfeld coefficient of 22 mJ K-2 mol-1 of Na1.4Os2O6.H2O was smallest among those of AOs2O6. A magnetic anomaly at ~57 K and possible associated magnetoresistance (+3.7 % at 2 K in 70 kOe) were found.
Nanostructured La0.67Ca0.33MnO3 (NS-LCMO) was formed by pulsed-laser deposition on the surface of porous Al2O3. The resistance peak temperature (Tp) of the NS-LCMO increases with increasing average thickness of the films, while their Curie temperatures (Tc) remain unchanged. The coercive field of the samples increases with decreasing film thickness and its temperature dependence can be well described by Hc(T) = Hc(0)[1-(T/TB)1/2]. A large magnetoresistance and strong memory effect were observed for the NS-LCMO. The results are discussed in terms of the size effect, Coulomb blockade and magnetic tunneling effect. This work also demonstrates a new way to get nanostructured manganites.
In this work, we investigate the thermal and electrical properties of oxygen-functionalized M2CO2 (M = Ti, Zr, Hf) MXenes using first-principles calculations. Hf2CO2 is found to exhibit a thermal conductivity better than MoS2 and phosphorene. The room temperature thermal conductivity along the armchair direction is determined to be 86.25-131.2 Wm-1K-1 with a flake length of 5-100 um, and the corresponding value in the zigzag direction is approximately 42% of that in the armchair direction. Other important thermal properties of M2CO2 are also considered, including their specific heat and thermal expansion coefficients. The theoretical room temperature thermal expansion coefficient of Hf2CO2 is 6.094x10-6 K-1, which is lower than that of most metals. Moreover, Hf2CO2 is determined to be a semiconductor with a band gap of 1.657 eV and to have high and anisotropic carrier mobility. At room temperature, the Hf2CO2 hole mobility in the armchair direction (in the zigzag direction) is determined to be as high as 13.5x103 cm2V-1s-1 (17.6x103 cm2V-1s-1), which is comparable to that of phosphorene. Broader utilization of Hf2CO2 as a material for nanoelectronics is likely because of its moderate band gap, satisfactory thermal conductivity, low thermal expansion coefficient, and excellent carrier mobility. The corresponding thermal and electrical properties of Ti2CO2 and Zr2CO2 are also provided here for comparison. Notably, Ti2CO2 presents relatively low thermal conductivity and much higher carrier mobility than Hf2CO2, which is an indication that Ti2CO2 may be used as an efficient thermoelectric material.
The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10^15 cm-3, while mobility of electrons is between 20 and 50 cm2/Vs. Electrical parameters of ZnO films deposited by ALD at low temperature regime are appropriate for constructing of the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are characterized by the rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100degC which makes them appropriate for deposition on organic substrates.
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