Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userALD grown zinc oxide with controllable electrical properties
228
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10^15 cm-3, while mobility of electrons is between 20 and 50 cm2/Vs. Electrical parameters of ZnO films deposited by ALD at low temperature regime are appropriate for constructing of the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are characterized by the rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100degC which makes them appropriate for deposition on organic substrates.
rate research
Read More
We generalize and systematize basic experimental data on optical and luminescence properties of ZnO single crystals, thin films, powders, ceramics, and nanocrystals. We consider and study mechanisms by which two main emission bands occur, a short-wavelength band near the fundamental absorption edge and a broad long-wavelength band, the maximum of which usually lies in the green spectral range. We determine a relationship between the two luminescence bands and study in detail the possibility of controlling the characteristics of ZnO by varying the maximum position of the short-wavelength band. We show that the optical and luminescence characteristics of ZnO largely depend on the choice of the corresponding impurity and the parameters of the synthesis and subsequent treatment of the sample. Prospects for using zinc oxide as a scintillator material are discussed. Additionally, we consider experimental results that are of principal interest for practice.
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Ceramics ZnO:Zn of 20mm diameter and 1.6mm thickness with an optical transparency up to 0.33 in the visible region have been prepared by hot pressing technique. Scintillating and luminescent characteristics such as emission spectra, decay time, yield, and TSL glow curve have been measured under X-ray excitation. Two emission bands peaking at 500 and 380 nm were detected, the light output was about 80% of that for standard BGO scintillator, main decay constant was 10.4 +/- 0.1 ns. The obtained data allow us to consider the ZnO:Zn ceramics as a perspective scintillator. Finally, the investigation shows that other ZnO-based fast scintillators can be fabricated in the form of optical ceramics.
Ionic layer epitaxy (ILE) has recently been developed as an effective strategy to synthesize nanometer-thick 2D materials with a non-layered crystal structure, such as ZnO. The packing density of the amphiphilic monolayer is believed to be a key parameter that controls the nanosheet nucleation and growth. In this work, we systematically investigated the growth behavior of single-crystalline ZnO nanosheets templated at the water-air interface by an anionic oleylsulfate monolayer with different packing densities. The thicknesses of ZnO nanosheets were tuned from one unit cell to four unit cells, and exhibited good correlation with the width of Zn2+ ion concentration zone (the Stern layer) underneath the ionized surfactant monolayer. Further analysis of the nanosheet sizes and density revealed that the nanosheet growth was dominated by the steric hindrance from the surfactant monolayer at lower surface pressure; while the nucleation density became the dominating factor at higher surface pressure. The ZnO nanosheets exhibited a decreasing work function as the thickness reduced to a few unit cells. This research validated a critical hypothesis that the nanosheet growth is self-limited by the formation of a double layer of ionic precursors. This work will open up a new way towards controlled synthesis of novel 2D nanosheets from non-layered materials with a thickness down to one unit cell.
We report the electrical resistivity, thermoelectric power, and thermal conductivity of single-crystalline and sintered samples of the 5d pyrochlore oxide CsW2O6. The electrical resistivity of the single crystal is 3 mohm cm at 295 K and gradually increases with decreasing temperature above 215 K (Phase I). The thermoelectric power of the single-crystalline and sintered samples shows a constant value of approximately -60 uV K-1 in Phase I. These results reflect that the electron conduction by W 5d electrons in Phase I is incoherent and in the hopping regime, although a band gap does not open at the Fermi level. The thermal conductivity in Phase I of both samples is considerably low, which might be due to the rattling of Cs+ ions. In Phase II below 215 K, the electrical resistivity and the absolute value of thermoelectric power of both samples strongly increase with decreasing temperature, corresponding to a transition to a semiconducting state with a band gap open at the Fermi level, while the thermal conductivity in Phase II is smaller than that in Phase I.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
