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Register a new userElectrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3
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Nanostructured La0.67Ca0.33MnO3 (NS-LCMO) was formed by pulsed-laser deposition on the surface of porous Al2O3. The resistance peak temperature (Tp) of the NS-LCMO increases with increasing average thickness of the films, while their Curie temperatures (Tc) remain unchanged. The coercive field of the samples increases with decreasing film thickness and its temperature dependence can be well described by Hc(T) = Hc(0)[1-(T/TB)1/2]. A large magnetoresistance and strong memory effect were observed for the NS-LCMO. The results are discussed in terms of the size effect, Coulomb blockade and magnetic tunneling effect. This work also demonstrates a new way to get nanostructured manganites.
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The structure-property relation of nanostructured Al-doped ZnO thin films has been investigated in detail through a systematic variation of structure and morphology, with particular emphasis on how they affect optical and electrical properties. A variety of structures, ranging from compact polycristalline films to mesoporous, hierarchically organized cluster assemblies, are grown by Pulsed Laser Deposition at room temperature at different oxygen pressures. We investigate the dependence of functional properties on structure and morphology and show how the correlation between electrical and optical properties can be studied to evaluate energy gap, conduction band effective mass and transport mechanisms. Understanding these properties opens the way for specific applications in photovoltaic devices, where optimized combinations of conductivity, transparency and light scattering are required.
Electrical transport of a polar heterointerface between two insulating perovskites, KTaO3 and SrTiO3, is studied. It is formed between a thin KTaO3 film deposited on a top of TiO2- terminated (100) SrTiO3 substrate. The resulting (KO)1-(TiO2)0 heterointerface is expected to be hole-doped according to formal valences of K (1+) and Ti (4+). We observed electrical conductivity and mobility in the KTaO3/SrTiO3 similar to values measured earlier in electron-doped LaAlO3/SrTiO3 heterointerfaces. However, the sign of the charge carriers in KTaO3/SrTiO3 obtained from the Hall measurements is negative. The result is an important clue to the true origin of the doping at perovskite oxide hetero-interfaces.
Nanocrystalline ribbons of inverse Heusler alloy Mn2Ni1.6Sn0.4 have been synthesised by melt spinning of the arc melted bulk precursor. The single phase ribbons crystallize into a cubic structure and exhibit very fine crystallite size of < 2 nm. Temperature dependent magnetization (M-T) measurements reveal that austenite (A)-martensite (M) phase transition begins at T~248 K and finishes at T~238 K during cooling cycle and these values increase to T~267 K and T~259 K while warming. In cooling cycle, the A-phase shows ferromagnetic (FM) ordering with a Curie temperature T~267 K, while both the FM-antiferromagnetic (AFM) and M-transitions occur at T~242 K. The M-phase undergoes FM transition at T~145 K. These transitions are also confirmed by temperature dependent resistivity measurements. The observed hysteretic behaviour of magnetization and resistivity in the temperature regime spanned by the A-M transition is a manifestation of the first order phase transition. Magnetization and susceptibility data also provide unambiguous evidence in favour of spin glass . The scaling of the glass freezing temperature (Tf) with frequency, extracted from the frequency dependent AC susceptibility measurements, confirms the existence of canonical spin glass at T<145 K. The occurrence of canonical spin glass has been explained in terms of the nanostructuring modified interactions between the FM correlations in the martensitic phase and the coexisting AFM.
Electrical conductivity, thermopower and magnetic properties of Fe-intercalated Fe0.33VSe2 has been reported between 4.2K - 300K. We observe a first order transition in the resistivity of the sintered pellets around 160K on cooling. The electronic properties including the transitional hysteresis in the resistance anomaly (from 80K-160K) are found to be very sensitive to the structural details of the samples, which were prepared in different annealing conditions. The thermopower results on the sintered pellets are reported between 10K - 300K. The magnetic measurements between 2K - 300K and up to 14 Tesla field show the absence of any magnetic ordering in Fe0.33VSe2. The magnetic moment per Fe -atom at room temperature (between 1.4 to 1.7 Bohr Magneton) is much lower than in previously reported anti-ferromagnetic FeV2Se4. Furthermore, the Curie constant shows a rapid and continuous reduction and combined with the high field magnetization result at 2K suggests a rapid decrease in the paramagnetic moments on cooling to low temperatures and the absence of any magnetic order in Fe0.33VSe2 at low temperatures.
Here, we report the growth and characterization of single crystals of NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and layered growth are confirmed through x-ray diffraction and Scanning electron microscopy respectively. A slight contraction in lattice parameters is seen after Nd doping. Also a minute shift in vibrational modes of recorded Raman spectra has been observed by doping of Nd in Sb2Te3. The magneto-resistance values under magnetic field of 5Tesla for Sb2Te3 are 75 percent at 2.5K and 60 percent at 20K, but only 40 percent at 5K for Nd0.1Sb1.9Te3. DC magnetic measurements exhibit expected diamagnetic and paramagnetic behaviors for pure and Nd doped crystals respectively. A cusp-like behavior is observed in magneto conductivity of both pure and Nd doped crystals at low magnetic fields below 1 Tesla which is analyzed using Hikami Larkin Nagaoka (HLN) model. For Sb2Te3 the fitted parameters alpha values are -1.02 and -0.58 and the phase coherence lengths are 50.8(6)nm & 34.9(8)nm at temperatures 2.5K and 20K respectively. For Nd0.1Sb1.9Te3, alpha is -0.29 and coherence length is 27.2(1) nm at 5K. The {alpha} values clearly show the presence of weak anti localization effect in both, pure and Nd doped samples. Also with Nd doping, the contribution of bulk states increases in addition to conducting surface states in overall conduction mechanism.
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