Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSubstrate engineering in the growth of perovskite crystals
249
0
0.0
(
0
)
Authors
Yu-Hao Deng
Ask ChatGPT about the research
No Arabic abstract
Metal halide perovskites have recently emerged as promising materials for the next generation of optoelectronic devices owing to their remarkable intrinsic properties. In the growth of perovskite crystals, the substrates are essential and play a vital role. Herein, substrate engineering in the growth of perovskite crystals have been reviewed. Particularly, various modified strategies and corresponding mechanism based on the substrate engineering applied to the optimization of thickness, nucleation and growth rate are highlighted. Then the alterable adhesion to substrates will also be discussed. Furthermore, applying the structural coherence of epitaxial crystals with substrate, scalable perovskite single-crystalline thin films have been obtained and can be transferred onto arbitrary substrates. Substrate engineering also can stabilize the desired perovskite phases by modulating the strain between crystals and substrates. Finally, several key challenges and related solutions in the growth of perovskite crystals based on substrate engineering are proposed. This review aims to guide the future of substrate engineering in perovskite crystals for various optoelectronic applications.
rate research
Read More
5d transition-metal-based oxides display emergent phenomena due to the competition between the relevant energy scales of the correlation, bandwidth, and most importantly, the strong spin-orbit coupling (SOC). Starting from the prediction of novel oxide topological insulators in bilayer ABO3 (B = 5d elements) thin-film grown along the (111) direction, 5d-based perovskites (Pv) form a new paradigm in the thin-film community. Here, we reviewed the scientific accomplishments in Pv-SrIrO3 thin films, a popular candidate for observing non-trivial topological phenomena. Although the predicted topological phenomena are unknown, the Pv-SrIrO3 thin film shows many emergent properties due to the delicate interplay between its various degrees of freedom. These observations provide new physical insight and encourage further research on the design of new 5d-based heterostructures or superlattices for the observation of the hidden topological quantum phenomena in strong spin-orbit coupled oxides.
Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.
The limitation of commercially available single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively studying fundamental physics in complex oxides. Here we report an approach for imposing continuously tunable, large epitaxial strain in oxide heterostructures beyond substrate limitations by inserting an interface layer through tailoring its gradual strain relaxation. Taking BiFeO3 as a model system, we demonstrate that the introduction of an ultrathin interface layer allows the creation of a desired strain that can induce phase transition and stabilize a new metastable super-tetragonal phase as well as morphotropic phase boundaries overcoming substrate limitations. Furthermore, continuously tunable strain from tension to compression can be generated by precisely adjusting the thickness of the interface layer, leading to the first achievement of continuous O-R-T phase transition in BiFeO3 on a single substrate. This proposed route could be extended to other oxide heterostructures, providing a platform for creating exotic phases and emergent phenomena.
Perovskite stability is of the core importance and difficulty in current research and application of perovskite solar cells. Nevertheless, over the past century, the formability and stability of perovskite still relied on simplified factor based on human knowledge, such as the commonly used tolerance factor t. Combining machine learning (ML) with first-principles density functional calculations, we proposed a strategy to firstly calculate the decomposition energies, considered to be closely related to thermodynamic stability, of 354 kinds halide perovskites, establish the machine learning relationship between decomposition energy and compositional ionic radius and investigate the stabilities of 14,190 halide double perovskites. The ML-predicted results enable us to rediscover a series of stable rare earth metal halide perovskites (up to ~1000 kinds), indicating the generalization of this model and further provide elemental and concentration suggestion for improving the stability of mixed perovskite.
We use a new, quantum-mechanics-based bond-order potential (BOP) to reveal melt-growth dynamics and fine-scale defect formation mechanisms in CdTe crystals. Previous molecular dynamics simulations of semiconductors have shown qualitatively incorrect behavior due to the lack of an interatomic potential capable of predicting both crystalline growth and property trends of many transitional structures encountered during the melt $rightarrow$ crystal transformation. Here we demonstrate successful molecular dynamics simulations of melt-growth in CdTe using a BOP that significantly improves over other potentials on property trends of different phases. Our simulations result in a detailed understanding of defect formation during the melt-growth process. Equally important, we show that the new BOP enables defect formation mechanisms to be studied at a scale level comparable to empirical molecular dynamics simulation methods with a fidelity level approaching quantum-mechanical methods
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
