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Register a new userWafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics
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Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.
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One-dimensional (1D) materials have attracted significant research interest due to their unique quantum confinement effects and edge-related properties. Atomically thin 1D nanoribbon is particularly interesting because it is a valuable platform with physical limits of both thickness and width. Here, we develop a catalyst-free growth method and achieves the growth of Bi2O2Se nanostructures with tunable dimensionality. Significantly, Bi2O2Se nanoribbons with thickness down to 0.65 nm, corresponding to monolayer, are successfully grown for the first time. Electrical and optoelectronic measurements show that Bi2O2Se nanoribbons possess decent performance in terms of mobility, on/off ratio, and photoresponsivity, suggesting their promising for devices. This work not only reports a new method for the growth of atomically thin nanoribbons but also provides a platform to study properties and applications of such nanoribbon materials at thickness limit.
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain > 1.0 in vacuum (pressure < 2 x 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 inch wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.
Metal halide perovskites have recently emerged as promising materials for the next generation of optoelectronic devices owing to their remarkable intrinsic properties. In the growth of perovskite crystals, the substrates are essential and play a vital role. Herein, substrate engineering in the growth of perovskite crystals have been reviewed. Particularly, various modified strategies and corresponding mechanism based on the substrate engineering applied to the optimization of thickness, nucleation and growth rate are highlighted. Then the alterable adhesion to substrates will also be discussed. Furthermore, applying the structural coherence of epitaxial crystals with substrate, scalable perovskite single-crystalline thin films have been obtained and can be transferred onto arbitrary substrates. Substrate engineering also can stabilize the desired perovskite phases by modulating the strain between crystals and substrates. Finally, several key challenges and related solutions in the growth of perovskite crystals based on substrate engineering are proposed. This review aims to guide the future of substrate engineering in perovskite crystals for various optoelectronic applications.
A novel strategy for the large scale and continuous production of aligned carbon nanotube arrays using millimeter-diameter spheres as growth substrates is reported. The present technique is more productive than the conventional process on flat wafers because of the higher available growth surface and the good fluidity of the spherical substrates. It can be adapted for the industrial production and application of aligned carbon nanotube arrays with lengths up to millimeter.
BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10^19-10^20 cm^-3. Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm^2/Vs. The absorption coefficient is > 10^5 cm-1 at photon energy > 1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. These results assure that BaZrS3 is a promising candidate for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.
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