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Register a new userTuning Spin Current Injection at Ferromagnet/Non-Magnet Interfaces by Molecular Design
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There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the impact of interfacial properties on the spin injection efficiency systematically. We show that both, spin injection efficiency at the interface as well as the spin diffusion length can be tuned sensitively by the interfacial molecular structure and side chain substitution of the molecule.
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Opposite to the common idea of a magnetic order requirement to obtain spin current propagation, materials with no magnetic ordering have also been revealed to be efficient spin conductors. In this work, we investigate the spin current injection at the interface between a magnetic insulator and a superconductor. We are mainly interested in the paramagnetic insulator/superconductor interface however, our model also describes the ferromagnetic phase. We used the Schwinger bosonic formalism to describe the magnetic insulator and standard BCS theory was applied to treat the superconductor layer. In the normal-metal limit, our results are in agreement with the expected ones. For example, we found the correct spin current behavior $Iapprox T^{3/2}$ at low temperature. In addition, our model shows a pronounced peak in the spin current injection at temperatures close to the superconductor transition temperature due to the superconducting quasiparticle coherence. The role of magnetic fields in the spin current injection is also investigated.
We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normalmetallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.
Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic interfaces. However, its relation to traditional, steady state, ferromagnetic resonance techniques is poorly understood. Here we investigate nanometric trilayers of Co/X/Pt (X=Ti, Au or Au0:85W0:15) as a function of the X layer thickness, where THz emission generated by the inverse spin Hall effect is compared to the Gilbert damping of the ferromagnetic resonance. Through the insertion of the X layer we show that the ultrafast spin current injected in the non-magnetic layer defines a direct spin conductance, whereas the Gilbert damping leads to an effective spin mixing-conductance of the trilayer. Importantly, we show that these two parameters are connected to each other and that spin-memory losses can be modeled via an effective Hamiltonian with Rashba fields. This work highlights that magneto-circuits concepts can be successfully extended to ultrafast spintronic devices, as well as enhancing the understanding of spin-to-charge conversion processes through the complementarity between ultrafast THz spectroscopy and steady state techniques.
A spin current through a ferromagnet/heavy-metal interface may shrink due to the spin-flip at the interface, resulting in the spin-memory loss. Here we propose a mechanism of the spin-memory loss. In contrast to other mechanisms based on interfacial spin-orbit coupling, our mechanism is based on the bulk spin-orbit coupling in a heavy-metal. We demonstrate that the bulk spin-orbit coupling induces the entanglement between the spin and orbital degrees of freedom and this spin-orbital entanglement can give rise to sizable spin-flip at the interface even when the interfacial spin-orbit coupling is weak. Our mechanism emphasizes crucial roles of the atomic orbital degree of freedom and induces the strong spin-memory loss near band crossing points between bands of different orbital characters.
The electric-field tunable Rashba spin-orbit coupling at the LaAlO3/SrTiO3 interface shows potential applications in spintronic devices. However, different gate dependence of the coupling strength has been reported in experiments. On the theoretical side, it has been predicted that the largest Rashba effect appears at the crossing point of the $d_{xy}$ and $d_{xz,yz}$ bands. In this work, we study the tuneability of the Rashba effect in LaAlO3/SrTiO3 by means of back-gating. The Lifshitz transition was crossed multiple times by tuning the gate voltage so that the Fermi energy is tuned to approach or depart from the band crossing. By analyzing the weak antilocalization behavior in the magnetoresistance, we find that the maximum spin-orbit coupling effect occurs when the Fermi energy is near the Lifshitz point. Moreover, we find strong evidence for a single spin winding at the Fermi surface.
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