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Register a new userTuning Rashba spin-orbit coupling at LaAlO3/SrTiO3 interfaces by band filling
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The electric-field tunable Rashba spin-orbit coupling at the LaAlO3/SrTiO3 interface shows potential applications in spintronic devices. However, different gate dependence of the coupling strength has been reported in experiments. On the theoretical side, it has been predicted that the largest Rashba effect appears at the crossing point of the $d_{xy}$ and $d_{xz,yz}$ bands. In this work, we study the tuneability of the Rashba effect in LaAlO3/SrTiO3 by means of back-gating. The Lifshitz transition was crossed multiple times by tuning the gate voltage so that the Fermi energy is tuned to approach or depart from the band crossing. By analyzing the weak antilocalization behavior in the magnetoresistance, we find that the maximum spin-orbit coupling effect occurs when the Fermi energy is near the Lifshitz point. Moreover, we find strong evidence for a single spin winding at the Fermi surface.
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A rather unique feature of the two-dimensional electron gas (2-DEG) formed at the interface between the two insulators LaAlO3 and SrTiO3 is to host both gate-tunable superconductivity and strong spin-orbit coupling. In the present work, we use the disorder generated by Cr substitution of Al atoms in LaAlO3 as a tool to explore the nature of superconductivity and spin-orbit coupling in these interfaces. A reduction of the superconducting Tc is observed with Cr doping consistent with an increase of electron-electron interaction in presence of disorder. In addition, the evolution of spin-orbit coupling with gate voltage and Cr doping suggests a DYakonov-Perel mechanism of spin relaxation in the presence of a Rashba-type spin-orbit interaction.
We use $vec{k}cdotvec{p}$ theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs- and InSb-based devices with different gate configurations to control symmetry and localization of the electron charge density. We explore gate-controlled SOC for wires of different size and doping, and we show that in high carrier density SOC has a non-linear electric field susceptibility, due to large reshaping of the quantum states. We analyze recent experiments with InSb nanowires in light of our calculations. Good agreement is found with SOC coefficients reported in Phys. Rev.B 91, 201413(R) (2015), but not with the much larger values reported in Nat Commun., 8, 478 (2017). We discuss possible origins of this discrepancy.
There is steadily increasing evidence that the two-dimensional electron gas (2DEG) formed at the interface of some insulating oxides like LaAlO3/SrTiO3 and LaTiO3/SrTiO3 is strongly inhomogeneous. The inhomogeneous distribution of electron density is accompanied by an inhomogeneous distribution of the (self-consistent) electric field confining the electrons at the interface. In turn this inhomogeneous transverse electric field induces an inhomogeneous Rashba spin-orbit coupling (RSOC). After an introductory summary on two mechanisms possibly giving rise to an electronic phase separation accounting for the above inhomogeneity,we introduce a phenomenological model to describe the density-dependent RSOC and its consequences. Besides being itself a possible source of inhomogeneity or charge-density waves, the density-dependent RSOC gives rise to interesting physical effects like the occurrence of inhomogeneous spin-current distributions and inhomogeneous quantum-Hall states with chiral edge states taking place in the bulk of the 2DEG. The inhomogeneous RSOC can also be exploited for spintronic devices since it can be used to produce a disorder-robust spin Hall effect.
Spin-orbit coupling (SOC) describes the relativistic interaction between the spin and momentum degrees of freedom of electrons, and is central to the rich phenomena observed in condensed matter systems. In recent years, new phases of matter have emerged from the interplay between SOC and low dimensionality, such as chiral spin textures and spin-polarized surface and interface states. These low-dimensional SOC-based realizations are typically robust and can be exploited at room temperature. Here we discuss SOC as a means of producing such fundamentally new physical phenomena in thin films and heterostructures. We put into context the technological promise of these material classes for developing spin-based device applications at room temperature.
The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements indicate that the Rashba coupling constant increases linearly with electrostatic doping. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.
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