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Register a new userTuning Magnetic Order in the van der Waals Metal Fe5GeTe2 by Cobalt Substitution
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Fe5-xGeTe2 is a van der Waals material with one of the highest reported bulk Curie temperatures, $T_C$ ~ 310K. In this study, theoretical calculations and experiments are utilized to demonstrate that the magnetic ground state is highly sensitive to local atomic arrangements and the interlayer stacking. Cobalt substitution is found to be an effective way to manipulate the magnetic properties while also increasing the ordering temperature. In particular, cobalt substitution up to 30% enhances $T_C$ and changes the magnetic anisotropy, while approximately 50% cobalt substitution yields an antiferromagnetic state. Single crystal x-ray diffraction evidences a structural change upon increasing the cobalt concentration, with a rhombohedral cell observed in the parent material and a primitive cell observed for ~46% cobalt content relative to iron. First principles calculations demonstrate that it is a combination of high cobalt content and the concomitant change to primitive layer stacking that produces antiferromagnetic order. These results illustrate the sensitivity of magnetism in Fe5-xGeTe2 to composition and structure, and emphasize the important role of structural order/disorder and layer stacking in cleavable magnetic materials.
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Van der Waals (VdW) materials have opened new directions in the study of low dimensional magnetism. A largely unexplored arena is the intrinsic tuning of VdW magnets toward new ground-states. The chromium trihalides provided the first such example with a change of inter-layer magnetic coupling emerging upon exfoliation. Here, we take a different approach to engineer new ground-states, not by exfoliation, but by tuning the spin-orbit coupling (SOC) of the non-magnetic ligand atoms (Cl,Br,I). We synthesize a three-halide series, CrCl$_{3-x-y}$Br$_{x}$I$_{y}$, and map their magnetic properties as a function of Cl, Br, and I content. The resulting triangular phase diagrams unveil a frustrated regime near CrCl$_{3}$. First-principles calculations confirm that the frustration is driven by a competition between the chromium and halide SOCs. Furthermore, we reveal a field-induced change of inter-layer coupling in the bulk of CrCl$_{3-x-y}$Br$_{x}$I$_{y}$ crystals at the same field as in the exfoliation experiments.
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room-temperature and the ability to grow films over large areas. Here we demonstrate the large-area growth of single-crystal ultrathin films of stoichiometric Fe5GeTe2 on an insulating substrate using molecular beam epitaxy. Magnetic measurements show the persistence of soft ferromagnetism up to room temperature, with a Curie temperature of 293 K, and a weak out-of-plane magnetocrystalline anisotropy. Surface, chemical, and structural characterizations confirm the layer-by-layer growth, 5:1:2 Fe:Ge:Te stoichiometric elementary composition, and single crystalline character of the films.
We demonstrate a new method of designing 2D functional magnetic topological heterostructure (HS) by exploiting the vdw heterostructure (vdw-HS) through combining 2D magnet CrI$_3$ and 2D materials (Ge/Sb) to realize new 2D topological system with nonzero Chern number (C=1) and chiral edge state. The nontrivial topology originates primarily from the CrI$_3$ layer while the non-magnetic element induces the charge transfer process and proximity enhanced spin-orbit coupling. Due to these unique properties, our topological magnetic vdw-HS overcomes the weak magnetization via proximity effect in previous designs since the magnetization and topology coexist in the same magnetic layer. Specifically, our systems of bilayer CrI$_3$/Sb and trilayer CrI$_3$/Sb/CrI$_3$ exhibit different topological ground state ranging from antiferromagnetic topological crystalline insulator (C$_M$= 2) to a QAHE. These nontrivial topological transition is shown to be switchable in a trilayer configuration due to the magnetic switching from antiferromagnetism to ferromangetism in the presence an external perpendicular electric field with value as small as 0.05 eV/A. Thus our study proposes a realistic system to design switchable magnetic topological device with electric field.
Magnetic van der Waals (vdW) materials have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far magnetic vdW materials are mainly insulating or semiconducting, and none of them possesses a high electronic mobility - a property that is rare in layered vdW materials in general. The realization of a magnetic high-mobility vdW material would open the possibility for novel magnetic twistronic or spintronic devices. Here we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2 V-1 s-1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3 is comparable to that of black phosphorus, and is only surpassed by graphite. By mechanical exfoliation, we further demonstrate that GdTe3 can be exfoliated to ultrathin flakes of three monolayers, and that the magnetic order and relatively high mobility is retained in approximately 20-nm-thin flakes.
The realization of magnetic frustration in a metallic van der Waals (vdW) coupled material has been sought as a promising platform to explore novel phenomena both in bulk matter and in exfoliated devices. However, a suitable material platform has been lacking so far. Here, we demonstrate that CeSiI hosts itinerant electrons coexisting with exotic magnetism. In CeSiI, the magnetic cerium atoms form a triangular bilayer structure sandwiched by van der Waals stacked iodine layers. From resistivity and magnetometry measurements, we confirm the coexistence of itinerant electrons with magnetism with dominant antiferromagnetic exchange between the strongly Ising-like Ce moments below 7 K. Neutron diffraction directly confirms magnetic order with an incommensurate propagation vector k ~ (0.28, 0, 0.19) at 1.6 K, which points to the importance of further neighbor magnetic interactions in this system. The presence of a two-step magnetic-field-induced phase transition along c axis further suggests magnetic frustration in the ground state. Our findings provide a novel material platform hosting a coexistence of itinerant electron and frustrated magnetism in a vdW system, where exotic phenomena arising from rich interplay between spin, charge and lattice in low dimension can be explored.
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